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公开(公告)号:GB2579729B
公开(公告)日:2022-06-08
申请号:GB202001670
申请日:2018-07-18
Applicant: IBM
Inventor: JOSHUA RUBIN , ARVIND KUMAR
Abstract: A memory device includes a semiconductor device on a wafer. The semiconductor device includes a gate structure, a first source/drain region, and a second source/drain region. The gate structure is on the first side of the wafer. The first source/drain region is also on the first side of the wafer, and contacts a first end of the gate structure. The second source/drain region is on the second side of the wafer and extends into the first side to contact a second end of the gate structure. The memory device further includes a memory storage element on the second side of the wafer. The memory storage element contacts the second source/drain region.
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2.
公开(公告)号:IL296249A
公开(公告)日:2022-11-01
申请号:IL29624922
申请日:2022-09-06
Applicant: IBM , ARVIND KUMAR , TAKASHI ANDO , DIRK PFEIFFER
Inventor: ARVIND KUMAR , TAKASHI ANDO , DIRK PFEIFFER
Abstract: A technique relates to biasing, using a control system, a crossbar array of resistive processing units (RPUs) under a midrange condition, the midrange condition causing resistances of the RPUs to result in a random output of low values and high values in about equal proportions. The control system reinforces the low values and the high values of the random output by setting the resistances of the RPUs to a state that forces the low values and the high values having resulted from the midrange condition. Reinforcing the low values and the high values makes the random output permanent even when the crossbar array of the RPUs is not biased under the midrange condition. The control system records a sequence of the low values and the high values of the random output responsive to reinforcing the low values and the high values of the random output.
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3.
公开(公告)号:GB2610344B
公开(公告)日:2025-01-15
申请号:GB202217559
申请日:2021-03-19
Applicant: IBM
Inventor: ARVIND KUMAR , TASASHI ANDO , DIRK PFEIFFER
Abstract: A technique relates to biasing, using a control system, a crossbar array of resistive processing units (RPUs) under a midrange condition, the midrange condition causing resistances of the RPUs to result in a random output of low values and high values in about equal proportions. The control system reinforces the low values and the high values of the random output by setting the resistances of the RPUs to a state that forces the low values and the high values having resulted from the midrange condition. Reinforcing the low values and the high values makes the random output permanent even when the crossbar array of the RPUs is not biased under the midrange condition. The control system records a sequence of the low values and the high values of the random output responsive to reinforcing the low values and the high values of the random output.
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公开(公告)号:GB2600585B
公开(公告)日:2024-03-27
申请号:GB202200773
申请日:2020-06-16
Applicant: IBM
Inventor: MUKTA FAROOQ , ARVIND KUMAR
IPC: H01L25/065 , G06F15/78 , H01L25/18
Abstract: Three-dimensional (3D) semiconductor memory structures and methods of forming 3D semiconductor memory structures are provided. The 3D semiconductor memory structure includes a chip comprising a memory and Through-Silicon Vias (TSVs). The 3D semiconductor memory structure further includes a hardware accelerator arranged on and coupled face-to-face to the above chip. The 3D semiconductor memory structure also includes a substrate arranged under the under the (3D) semiconductor memory structure and the hardware accelerator and attached to the TSVs and external inputs and outputs of the memory chip and the hardware accelerator.
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公开(公告)号:GB2547752A
公开(公告)日:2017-08-30
申请号:GB201621726
申请日:2016-12-20
Applicant: IBM
Inventor: SHARATHCHANDRA UMAPATHIRAO PANKANTI , ARVIND KUMAR , JANUSZ MARECKI , BAN KAWAS
IPC: G06T7/70
Abstract: A received image (1301) is divided into patches, which may have different sizes. A cluster-direction sequence (see fig. 6) is generated (1302) for each of a plurality of saccadic paths along the patches, the paths being given by a policy matrix (see figs. 8 & 9). The sequences are used to identify an object in the image. Path sequence generation using the matrix may comprise assigning (1303) a likelihood (which may be weighted (1304) using a total frequency of occurrence of the sequence in the matrix for a given class) that the image belongs to each class defined in the matrix, and identifying (1305) the object using a likelihood average over the sequences. Image context, e.g. previous observations or goal, may be used. The patches may be clustered into groups, e.g. using k-means clustering algorithm (see figs. 4&5). Specific salient features in an image may thus be identified, leading to a classification of the image by judging whether the salient features can identify a unique class of object (e.g. 9 MNIST digits, or image classes in ImageNet, e.g. cats, planes etc.) in the image with high probability. Classification may occur through progressive exclusion of other classes.
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公开(公告)号:GB2600585A
公开(公告)日:2022-05-04
申请号:GB202200773
申请日:2020-06-16
Applicant: IBM
Inventor: MUKTA FAROOQ , ARVIND KUMAR
IPC: G06F15/78
Abstract: Three-dimensional (3D) semiconductor memory structures and methods of forming 3D semiconductor memory structures are provided. The 3D semiconductor memory structure includes a chip comprising a memory and Through-Silicon Vias (TSVs). The 3D semiconductor memory structure further includes a hardware accelerator arranged on and coupled face-to-face to the above chip. The 3D semiconductor memory structure also includes a substrate arranged under the under the (3D) semiconductor memory structure and the hardware accelerator and attached to the TSVs and external inputs and outputs of the memory chip and the hardware accelerator.
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公开(公告)号:GB2579729A
公开(公告)日:2020-07-01
申请号:GB202001670
申请日:2018-07-18
Applicant: IBM
Inventor: JOSHUA RUBIN , ARVIND KUMAR
Abstract: A memory device includes a semiconductor device on a wafer. The semiconductor device includes a gate structure, a first source/drain region, and a second source/drain region. The gate structure is on the first side of the wafer. The first source/drain region is also on the first side of the wafer, and contacts a first end of the gate structure. The second source/drain region is on the second side of the wafer and extends into the first side to contact a second end of the gate structure. The memory device further includes a memory storage element on the second side of the wafer. The memory storage element contacts the second source/drain region.
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8.
公开(公告)号:IL296249B1
公开(公告)日:2025-04-01
申请号:IL29624922
申请日:2022-09-06
Applicant: IBM , ARVIND KUMAR , TAKASHI ANDO , DIRK PFEIFFER
Inventor: ARVIND KUMAR , TAKASHI ANDO , DIRK PFEIFFER
Abstract: A technique relates to biasing, using a control system, a crossbar array of resistive processing units (RPUs) under a midrange condition, the midrange condition causing resistances of the RPUs to result in a random output of low values and high values in about equal proportions. The control system reinforces the low values and the high values of the random output by setting the resistances of the RPUs to a state that forces the low values and the high values having resulted from the midrange condition. Reinforcing the low values and the high values makes the random output permanent even when the crossbar array of the RPUs is not biased under the midrange condition. The control system records a sequence of the low values and the high values of the random output responsive to reinforcing the low values and the high values of the random output.
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公开(公告)号:GB2547752B
公开(公告)日:2018-01-24
申请号:GB201621726
申请日:2016-12-20
Applicant: IBM
Inventor: SHARATHCHANDRA UMAPATHIRAO PANKANTI , ARVIND KUMAR , JANUSZ MARECKI , BAN KAWAS
IPC: G06T7/70
Abstract: A method of operating an image detection device includes receiving an image, dividing the image into a plurality of patches, grouping ones of the plurality of patches, generating a set of saccadic paths through the plurality of patches of the image, generating a cluster-direction sequence for each saccadic path, generating a policy function for identifying an object in a new image using a combination of the cluster-direction sequences, and operating the image detection device using the policy function to identify an object in the new image.
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公开(公告)号:GB2517854B
公开(公告)日:2016-08-31
申请号:GB201419746
申请日:2013-03-13
Applicant: IBM
Inventor: BRUCE B DORIS , KANGGUO CHENG , BALASUBRAMANIAN HARAN , ALI KHAKIFIROOZ , PRANITA KULKARNI , ARVIND KUMAR , SHOM PONOTH
IPC: H01L21/762 , H01L21/8238
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