公开(公告)号：JPH05136173A

公开(公告)日：1993-06-01

申请号：JP11044692

申请日：1992-04-28

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  MUNEKATA HIROO

IPC: H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812

Abstract: PURPOSE: To provide a method for manufacturing a new quantum thin line or quantum dot and further improve the performance of a device by applying a semiconductor structure with the quantum thin line or quantum dot to an electronic device. CONSTITUTION: Conductivity is permanently recovered by injecting a proper amount of III group element, such as Ga ion into the arbitrary region of a high-resistance GaAs layer 2. At a region 3 where the element is injected, As fine crystal is changed into GaAs single crystal by a solid phase reaction of Ga+As→GaAs by a proper annealing process, thus eliminating the depletion region of a carrier, to generate a carrier inside the ion-implanted region 3 of the GaAs layer 2, containing an excessive amount of As fine crystal or point defect that is doped but has a high resistance and entrapping it.