公开(公告)号：DE69025564D1

公开(公告)日：1996-04-04

申请号：DE69025564

申请日：1990-12-07

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  KANO SATORU S ,  KUMATA KIYOSHI ,  LEE VICTOR Y ,  SCHELLENBERG FRANKLIN MARK ,  TAKAHASHI YUTAKA

IPC: G02F1/35 ,  G02F1/355 ,  G02F3/02

Abstract: The invention relates to a nonlinear optical device comprising a film structure (2) coated on a substrate (1) without interposition of adhesive. According to the invention the device is characterised in that the film structure comprises a modulated intercalation structure consisting of a layer of semi-conductor material and a layer of organic material, the layers having different energy gaps and the modulated structure being a super lattice structure. The invention also relates to a method of manufacturing a nonlinear optical device comprising dissolving an organic material in a solvent, and spin coating the solution onto a substrate and thereby forming an organic material film with one of its crystal axes oriented in the direction normal to the substrate, the film having a modulated structure of the two types of layers alternately intercalated and differing in energy gap in the direction.

公开(公告)号：CA2066002C

公开(公告)日：1996-01-30

申请号：CA2066002

申请日：1992-04-14

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  MUNEKATA HIRO

IPC: H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812 ,  H01L21/20 ,  H01L21/321

Abstract: Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electronic device with high speed and low power consumption, using a combination of low-temperature-growth molecular beam epitaxy (LTG-MBE) and focused ion beam (FIB) implantation. The compound semiconductor (GaAs) epitaxial layers, which are made by LTG-MBE, are used as targets of Ga FIB implantation to make Ga wire or dot arrays. Precipitation of arsenic microcrystals, which are initially embedded in a single crystal GaAs layer and act as Schottky barriers, are typically observed in an LTG GaAs layer. A thermal annealing process, after implantation, changes the arsenic microcrystals to GaAs crystals if the arsenic microcrystals are in the region in which the Ga ions are implanted. A wire-like shape free of As microcrystals then acts as a quantum wire for electrons or holes whereas a dot-like shape free of As microcrystals acts as a quantum dot. The co-existence of Ga ions and dopant ions, which provides conductivity type carriers opposite to the conductivity type of the majority carriers of a channel region of an FET, provides the fabrication of very narrow junction gate region for any FET.

公开(公告)号：CA2066002A1

公开(公告)日：1992-11-18

申请号：CA2066002

申请日：1992-04-14

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  MUNEKATA HIRO

IPC: H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812 ,  H01L21/20 ,  H01L21/321

Abstract: Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electronic device with high speed and low power consumption, using a combination of low-temperature-growth molecular beam epitaxy (LTG-MBE) and focused ion beam (FIB) implantation. The compound semiconductor (GaAs) epitaxial layers, which are made by LTG-MBE, are used as targets of Ga FIB implantation to make Ga wire or dot arrays. Precipitation of arsenic microcrystals, which are initially embedded in a single crystal GaAs layer and act as Schottky barriers, are typically observed in an LTG GaAs layer. A thermal annealing process, after implantation, changes the arsenic microcrystals to GaAs crystals if the arsenic microcrystals are in the region in which the Ga ions are implanted. A wire-like shape free of As microcrystals then acts as a quantum wire for electrons or holes whereas a dot-like shape free of As microcrystals acts as a quantum dot. The co-existence of Ga ions and dopant ions, which provides conductivity type carriers opposite to the conductivity type of the majority carriers of a channel region of an FET, provides the fabrication of very narrow junction gate region for any FET.

公开(公告)号：DE69217344T2

公开(公告)日：1997-08-21

申请号：DE69217344

申请日：1992-07-09

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  LIU LING YI ,  MENDEZ EMILIO EUGENIO

IPC: H01S5/00 ,  H01S3/0941 ,  H01S5/026 ,  H01S5/04 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/34 ,  H01S3/103 ,  H01S3/19 ,  H01S3/094 ,  G02F1/01 ,  G02F1/03 ,  H04B10/00

Abstract: The present invention is the use of coupled quantum wells (122, 126) in the active region of a semiconductor laser (30) to modulate the frequency and amplitude of the light output (50) of the laser (30). In a particular embodiment of the present invention the coupled quantum wells (122, 126) are contained in a graded index (115, 130) of refraction semiconductor double heterostructure laser (30). The active region (120) of this tunable laser (30) consists of two quantum wells (126, 122) having a width of approximately 5 nm or less which are separated by a barrier layer (124) having a width of approximately 2 nm or less. The quantum well material is intrinsic GaAs and the barrier layer is AlxGa1-xAs wherein x=.23. The active region (120) is surrounded by the double heterostructure in which one side is doped p-type and the second side is doped n-type. The resulting laser (30) is a p-i-n type structure. A reverse bias with respect to the flat band voltage of the p-i-n structure is applied across the p-i-n structure which modulates both the frequency and the intensity of the laser output (50). The tunable laser (30) is pumped with a variety of conventional means, including both electrical and optical (40) pumping. The modulation of the wavelength is approximately linear over a 1.5 volt operating range. A tunable laser (30), such as the present invention, having an output wavelength modulated by an electric field is useful in the field of optical communications and computing.

公开(公告)号：DE69018390T2

公开(公告)日：1995-10-12

申请号：DE69018390

申请日：1990-12-07

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  KANO SATORU S ,  TAKAHASHI YUTAKA

IPC: G02F1/295 ,  H01S5/026 ,  H01S5/062 ,  G02F1/025

公开(公告)号：DE69018390D1

公开(公告)日：1995-05-11

申请号：DE69018390

申请日：1990-12-07

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  KANO SATORU S ,  TAKAHASHI YUTAKA

IPC: G02F1/295 ,  H01S5/026 ,  H01S5/062 ,  G02F1/025

公开(公告)号：JP2005157128A

公开(公告)日：2005-06-16

申请号：JP2003397920

申请日：2003-11-27

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FUKUZAWA TADASHI ,  HASEGAWA MASAKI

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/125 ,  G02B6/13 ,  G02B6/30 ,  G02B6/42 ,  G02B6/43 ,  H05K1/02

CPC classification number: G02B6/30 ,  G02B6/125 ,  G02B6/4214 ,  G02B6/43 ,  G02B2006/12104 ,  H05K1/0274 ,  H05K1/144

Abstract: PROBLEM TO BE SOLVED: To provide an optical transmission substrate which has high coupling efficiency and in which an optical waveguide is hard to be damaged. SOLUTION: This optical transmission substrate has a 1st substrate, the optical waveguide which has a core and a clad covering the outer periphery of the core and extends on the top surface of the 1st substrate, a 2nd substrate which is provided in parallel to the 1st substrate so that its under surface comes into contact with the top surface of the optical waveguide, a reflecting surface which is provided on a section of the core at an end of the optical waveguide and reflects light traveling in the core of the optical waveguide toward the 2nd substrate, and an optical waveguide which guides the light reflected toward the 2nd substrate from a position closer to the core than to the top surface of the clad toward the top surface of the 2nd substrate and is provided in the 2nd substrate. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种具有高耦合效率并且光波导难以损坏的光传输基板。 解决方案：该光传输基板具有第一基板，光波导具有芯和覆盖芯的外周的包层，并且在第一基板的顶表面上延伸，第二基板平行设置 到第一基板，使得其下表面与光波导的顶表面接触;反射表面，其被设置在光波导端部的芯部的一部分上，并反射在光纤的芯中行进的光 波导朝向第二基板，以及光波导，其将朝向第二基板反射的光从位于比第二基板的顶面更靠近芯的位置朝向第二基板的上表面引导，并设置在第二基板中。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JPH11109893A

公开(公告)日：1999-04-23

申请号：JP24497797

申请日：1997-09-10

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  SHIOTANI SHIGEO

IPC: G02F1/1335 ,  C09K11/56 ,  C09K11/73 ,  C09K11/78 ,  C09K11/79 ,  G02F1/133 ,  G02F1/13357 ,  G09F9/00 ,  G09F9/35

Abstract: PROBLEM TO BE SOLVED: To obtain an excellent color rendering property (color reproducibility) and high response characteristic with a high efficiency by time-serially illuminating liquid crystals by using cold cathode discharge tubes coated with phosphors of red, green and blue. SOLUTION: The cold cathode discharge tubes 25, 26, 27 of red, green and blue having excellent high-speed transient characteristics are used. A screen corresponding to data of red is first written to the liquid crystal screen over the entire part of the display device. The red cold cathode discharge tube 25 lights after the end of the writing and puts out after the red screen lasts for a specified time. The screen corresponding to data of green is then written to the liquid crystal screen. The green cold cathode discharge tube 26 lights after the completion. The writing and the illumination are thereafter repeated in time serially with the blue, red and green. (SrMg)3 (PO4 )2 : Sn is used for the red regions, Y3 Al3 Ga2 O12 : Ce for the green regions and Y2 SiO5 : Ce for the blue regions as the phosphors to be applied on the cold cathode discharge tubes 25, 26, 27.

公开(公告)号：JPH06147841A

公开(公告)日：1994-05-27

申请号：JP29700492

申请日：1992-11-06

Applicant: IBM JAPAN

Inventor： MORITA TETSUHARU ,  KUNO TEIJI ,  FUKUZAWA TADASHI ,  ISOGI KOUICHI ,  NODA HIROSHI

IPC: G01B9/02 ,  G01B11/14 ,  G01D1/02 ,  G11B21/21

Abstract: PURPOSE:To provide a floating amount measuring apparatus for head which exhibits high sensitivity through simple structure. CONSTITUTION:Light projected from a white light source 25 is introduced into a gap between a disc 23 and a head 21 where multiple reflection takes place. Light reflected on an opaque body, out of the disc 23 and the head 21, is polarized into at least three wavelength regions and introduced to different optical detecting means 35, 36, 37. An estimating unit 38 estimates floating amount of head from an output of the optical detecting means according to the method of least squares based on a function between disc head gap lengths predetermined for respective wavelength regions and the intensity of reflected light detected through the optical detecting means. Calculation is carried out in real time according to table lookup system or follow-up control system.

公开(公告)号：JP2001228478A

公开(公告)日：2001-08-24

申请号：JP2001002426

申请日：2001-01-10

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  OBARA SAYURI ,  LEE VICTOR YEE WAY ,  MILLER ROBERT D ,  SCOTT JOHN CAMPBELL ,  SWANSON SALLY A

IPC: G02F1/061 ,  G02F1/1335 ,  G02F1/13357

Abstract: PROBLEM TO BE SOLVED: To provide a full color liquid crystal display using a photoluminescence(PL) fiber. SOLUTION: New architecture simplifies an LCD manufacture process by substituting a photolithography step for color filter manufacture to a fiber spinning technique at low cost and with high throughput. The new LCD architecture has the power efficiency higher than a conventional LCD. Following structures are included in the three structures of the LCD device using a photoluminescence(PL) fiber array. The first structure having the PL fiber array located behind an LC shutter (to a user), the second structure having the PL fiber array located on the LC shutter, and the third structure where the PL fiber array in located in an LC cell outside. In one of the structures of these, the fiber not only emits light, but performs the polarization of incident light.