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公开(公告)号:DE3264623D1
公开(公告)日:1985-08-14
申请号:DE3264623
申请日:1982-03-18
Applicant: IBM DEUTSCHLAND , IBM
Inventor: BOHLEN HARALD DIPL PHYS , ENGELKE HELMUT DR DIPL PHYS , GRESCHNER JOHANN DR DIPL PHYS , MUHL REINHOLD , NEHMIZ PETER DR DIPL PHYS , TRUMPP HANS-JOACHIM DR DIPL PH
IPC: G03B27/32 , G02B27/00 , G03F7/20 , G03F9/00 , H01J37/20 , H01J37/304 , H01L21/027 , H01L21/26 , H01L21/42 , H01L21/68 , H05K3/10
Abstract: For mutually aligning (registering) mask and substrate in X- or corpuscular ray lithography, an electron beam (16) is used which extends collaterally to the exposure beam (ion beam or X-ray) and which is suppressed during the actual exposure process. For coupling the electron beam to the exposure beam path, a magnetic field (7) is used. The accurate relative position of mask and substrate is determined during alignment by tilting the electron beam. Fine alignment during exposure is effected by suitably tilting the ion beam or shifting the substrate relative to the X-ray. The mask (10) used for exposure consists of a very thin silicon layer with a pattern area (M) and a registration area (R) spatially separated therefrom. The registration area consists of a plurality of openings, the pattern area of blind holes.
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公开(公告)号:DE3375252D1
公开(公告)日:1988-02-11
申请号:DE3375252
申请日:1983-08-11
Applicant: IBM DEUTSCHLAND , IBM
Inventor: BEHRINGER UWE DR DIPL PHYS , BOHLEN HARALD DIPL PHYS , KULCKE WERNER DR DIPL PHYS , NEHMIZ PETER DR DIPL PHYS
IPC: H01L21/027 , G03F7/20 , H01J37/30 , H01J37/317
Abstract: The appts. projects a shadow image of a mask a small distance from the surface. The mask (13) is exposed to a homogeneous collimated beam of electrons (15) emitted by an unstructed photocathode (16) of large area. The electron beam is collimated by an electric field between photocathode (16) and the surface (12) being exposed. The surface of the photocathode essentially corresponds to the surface of the mask being exposed. Alternatively, the surface of the photocathode corresponds chips and exposure occurs in steps. The electrical potential of the mask corresponds to an equipotential surface of the electrical field between the photocathode and the surface being exposed, which acts as anode.
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公开(公告)号:DE3370699D1
公开(公告)日:1987-05-07
申请号:DE3370699
申请日:1983-05-25
Applicant: IBM DEUTSCHLAND , IBM
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公开(公告)号:DE2860937D1
公开(公告)日:1981-11-12
申请号:DE2860937
申请日:1978-07-19
Applicant: IBM
Inventor: BOHLEN HARALD DIPL PHYS , GRESCHNER JOHANN DR DIPL PHYS , KULCKE WERNER DR DIPL PHYS , NEHMIZ PETER DR DIPL PHYS
Abstract: A method of exposure of a target object by means of corpuscular beam shadow printing through a mask with several complementary zones wherein the beam, shiftable and tiltable about a point in the mask plane and arranged in parallel at a small distance from the target object, is first impinged upon a first of the complementary zones, then the object is shifted under a second of the complementary zones, and the positioning of the beam is changed so that any deviation of the actual position of the second area of the target object to be exposed from its nominal position is determined and compensated for by tilting the beam about a point substantially in the mask plane.
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