公开(公告)号：DE3264623D1

公开(公告)日：1985-08-14

申请号：DE3264623

申请日：1982-03-18

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： BOHLEN HARALD DIPL PHYS ,  ENGELKE HELMUT DR DIPL PHYS ,  GRESCHNER JOHANN DR DIPL PHYS ,  MUHL REINHOLD ,  NEHMIZ PETER DR DIPL PHYS ,  TRUMPP HANS-JOACHIM DR DIPL PH

IPC: G03B27/32 ,  G02B27/00 ,  G03F7/20 ,  G03F9/00 ,  H01J37/20 ,  H01J37/304 ,  H01L21/027 ,  H01L21/26 ,  H01L21/42 ,  H01L21/68 ,  H05K3/10

Abstract: For mutually aligning (registering) mask and substrate in X- or corpuscular ray lithography, an electron beam (16) is used which extends collaterally to the exposure beam (ion beam or X-ray) and which is suppressed during the actual exposure process. For coupling the electron beam to the exposure beam path, a magnetic field (7) is used. The accurate relative position of mask and substrate is determined during alignment by tilting the electron beam. Fine alignment during exposure is effected by suitably tilting the ion beam or shifting the substrate relative to the X-ray. The mask (10) used for exposure consists of a very thin silicon layer with a pattern area (M) and a registration area (R) spatially separated therefrom. The registration area consists of a plurality of openings, the pattern area of blind holes.

公开(公告)号：DE3375252D1

公开(公告)日：1988-02-11

申请号：DE3375252

申请日：1983-08-11

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： BEHRINGER UWE DR DIPL PHYS ,  BOHLEN HARALD DIPL PHYS ,  KULCKE WERNER DR DIPL PHYS ,  NEHMIZ PETER DR DIPL PHYS

IPC: H01L21/027 ,  G03F7/20 ,  H01J37/30 ,  H01J37/317

Abstract: The appts. projects a shadow image of a mask a small distance from the surface. The mask (13) is exposed to a homogeneous collimated beam of electrons (15) emitted by an unstructed photocathode (16) of large area. The electron beam is collimated by an electric field between photocathode (16) and the surface (12) being exposed. The surface of the photocathode essentially corresponds to the surface of the mask being exposed. Alternatively, the surface of the photocathode corresponds chips and exposure occurs in steps. The electrical potential of the mask corresponds to an equipotential surface of the electrical field between the photocathode and the surface being exposed, which acts as anode.

公开(公告)号：DE3370699D1

公开(公告)日：1987-05-07

申请号：DE3370699

申请日：1983-05-25

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： BOHLEN HARALD DIPL PHYS ,  BRETSCHER ERWIN DIPL ING ,  ENGELKE HELMUT DR DIPL PHYS ,  GRESCHNER JOHANN DR DIPL PHYS ,  NEHMIZ PETER DR DIPL PHYS ,  VETTIGER PETER DIPL ING

IPC: H01L21/30 ,  G03F1/20 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/00

公开(公告)号：DE2922416A1

公开(公告)日：1980-12-11

申请号：DE2922416

申请日：1979-06-01

Applicant: IBM DEUTSCHLAND

Inventor： BOHLEN HARALD DIPL PHYS ,  ENGELKE HELMUT DIPL PHYS DR ,  GRESCHNER JOHANN DIPL PHYS DR ,  NEHMIZ PETER DIPL PHYS DR

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/20 ,  H01L21/31 ,  H01L21/308

Abstract: A mask for structuring surface areas and a method for manufacture thereof. The mask includes at least one metal layer with throughgoing apertures which define the mask pattern and a semiconductor substrate for carrying the metal layer. The semiconductor substrate has throughholes that correspond to the mask pattern. The throughholes in the semiconductor substrate extend from the metal layer-covered surface on the front to at least one tubshaped recess which extends from the other back surface into the semiconductor substrate. Holes are provided in a surface layer in the semiconductor substrate. The surface layer differs in its doping from the rest of the substrate and the holes which are provided in the surface layer have lateral dimensions larger than the apertures in the metal layer so that the metal layer protrudes over the surface layer.

公开(公告)号：DE2739502A1

公开(公告)日：1979-03-08

申请号：DE2739502

申请日：1977-09-02

Applicant: IBM DEUTSCHLAND

Inventor： BOHLEN HARALD DIPL PHYS ,  GRESCHNER JOHANN DIPL PHYS DR ,  KULCKE WERNER DIPL PHYS DR ,  NEHMIZ PETER DIPL PHYS DR

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/20 ,  G03F7/20 ,  H01J37/30 ,  H01L21/00 ,  H01L21/68

Abstract: A method of exposure of a target object by means of corpuscular beam shadow printing through a mask with several complementary zones wherein the beam, shiftable and tiltable about a point in the mask plane and arranged in parallel at a small distance from the target object, is first impinged upon a first of the complementary zones, then the object is shifted under a second of the complementary zones, and the positioning of the beam is changed so that any deviation of the actual position of the second area of the target object to be exposed from its nominal position is determined and compensated for by tilting the beam about a point substantially in the mask plane.

公开(公告)号：DE59208335D1

公开(公告)日：1997-05-15

申请号：DE59208335

申请日：1992-12-14

Applicant: IBM

Inventor： ARNOLD HANS ,  BOHLEN HARALD DIPL PHYS ,  LUECK PETER DIPL ING ,  TAM ANDREW C DR ,  WAGNER HANS HELMUT DIPL PHYS D ,  ZAPKA WERNER DIPL PHYS DR ,  ZIEMLICH WINFRID DIPL PHYS

IPC: H05K1/02 ,  H05K3/00 ,  H05K3/06 ,  H05K3/46 ,  H05K1/00

公开(公告)号：DE2860937D1

公开(公告)日：1981-11-12

申请号：DE2860937

申请日：1978-07-19

Applicant: IBM

Inventor： BOHLEN HARALD DIPL PHYS ,  GRESCHNER JOHANN DR DIPL PHYS ,  KULCKE WERNER DR DIPL PHYS ,  NEHMIZ PETER DR DIPL PHYS

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/20 ,  G03F7/20 ,  H01J37/30 ,  H01L21/00

Abstract: A method of exposure of a target object by means of corpuscular beam shadow printing through a mask with several complementary zones wherein the beam, shiftable and tiltable about a point in the mask plane and arranged in parallel at a small distance from the target object, is first impinged upon a first of the complementary zones, then the object is shifted under a second of the complementary zones, and the positioning of the beam is changed so that any deviation of the actual position of the second area of the target object to be exposed from its nominal position is determined and compensated for by tilting the beam about a point substantially in the mask plane.

公开(公告)号：DE2703074A1

公开(公告)日：1978-07-27

申请号：DE2703074

申请日：1977-01-26

Applicant: IBM DEUTSCHLAND

Inventor： SCHUENEMANN CLAUS DIPL ING DR ,  BOHLEN HARALD DIPL PHYS

IPC: G11C11/23 ,  G11C15/00 ,  H01J31/60 ,  G11C13/08 ,  G09F9/00 ,  G11C15/04

Abstract: The store consists of a CRT with a single or two-stage electrostatic deflection system and a storage medium pref. in the form of a semiconductor chip. The electron beam serves for reading, writing and erasing of signals. A multiple electron gun generates several beams, and is followed by a hole matrix electrode (1) consisting of crossing metal strips with holes at their crosspoints. This matrix has a hole matrix controlled through x and y addresses for the beam deflection to the storage medium proper.

公开(公告)号：DE3410885A1

公开(公告)日：1985-10-03

申请号：DE3410885

申请日：1984-03-24

Applicant: IBM DEUTSCHLAND

Inventor： BEHRINGER UWE DIPL PHYS DR ,  BOHLEN HARALD DIPL PHYS ,  NEHMIZ PETER DIPL PHYS DR ,  ZAPKA WERNER DIPL PHYS DR

IPC: G03F1/00 ,  G01B11/00 ,  G03F1/08 ,  G03F1/16 ,  G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  H01L21/26 ,  H01L21/30 ,  H01L21/308 ,  H01L21/32 ,  H01L21/66 ,  G03F3/10 ,  H01J37/244

Abstract: To test transmission masks (3) for electron or ion beam lithography, the corpuscular beam (2) is inclined to guide the shadow image of a mask portion across a pinhole diaphragm (20, 40) comprising at least one aperture with submicron dimensions. The test for geometrical errors is effected with a single hole diaphragm (20) arranged above a scintillator (21) connected to a photomultiplier (22); the single hole diaphragm is positioned below selected measuring points of the exposure mask to determine the accurate position of the measuring point relative to the diaphragm by beam tilting. The relative spacing of two measuring points is derived from the interferometrically measured table displacement and the beam inclination. To test the entire mask area for errors and impurity particles, a multihole diaphragm (40) is used having submicron apertures arranged in matrix fashion above an integrated circuit of the charge transfer type which provides a MOS capacitor as a particle detector underneath each diaphragm opening. The exposure mask is scanned in steps, effecting several single exposures at each position by inclining the beam.

公开(公告)号：DE2939044A1

公开(公告)日：1981-04-09

申请号：DE2939044

申请日：1979-09-27

Applicant: IBM DEUTSCHLAND

Inventor： BOHLEN HARALD DIPL PHYS ,  GRESCHNER JOHANN DIPL PHYS DR ,  NEHMIZ PETER DIPL PHYS DR ,  KULCKE WERNER DIPL PHYS DR

IPC: H01J37/20 ,  H01J37/304 ,  H01L21/68 ,  H01L21/26

Abstract: The mutual alignment of mask and substrate patterns of a specific semiconductor structure are attained by use of a plurality of individual marks in a specific geometric position with respect to each other. By the arrangement of openings in the alignment pattern of the mask, the broad electron beam is split into a multitude of individual beams which interact with alignment marks on the substrate. The interaction is used to generate a coincidence signal. The signal to noise ratio of this arrangement is determined by the overall current and is comparable to that of a thin concentrated electron beam. Registration is effected in a small amount of time and the disadvantageous effects of the high current density used in the raster process are not a factor. In a preferred embodiment, the alignment pattern of the mask is a matrix with center spacings of openings increasing upon advance in two directions perpendicular to each other such that no distance can be represented by the sum of smaller distances. Alignment signals are provided by detecting either absorbed or reflected electrons. A plurality of detectors in the mask are used to detect the reflected electrons.