公开(公告)号：JP2002074606A

公开(公告)日：2002-03-15

申请号：JP2001194639

申请日：2001-06-27

Applicant: IBM

Inventor： KASIRAJ PRAKASH ,  NEIL LESLIE ROBERTSON ,  WICKRAMASINGHE HEMANTHA KUMAR

IPC: G11B5/31 ,  G11B5/00 ,  G11B5/02 ,  G11B5/127 ,  G11B5/39 ,  G11B11/10 ,  G11B13/04

Abstract: PROBLEM TO BE SOLVED: To provide a writing head for a heat support type magnetic recording system attaining a narrow track width. SOLUTION: A thin film inductive writing head includes an electric resistance heater 20 disposed in a writing gap WG between the extreme tips of the writing head. A resistance heater is inserted between first and second spacer layers I1 and I2 disposed between the extreme tips of the writing head. In CIP head, spacer layers are made of insulating materials, an electric lead is formed as a part of a film between the spacer layers, and brought into contact with each side of the resistance heater. The width WR of the resistance heater is smaller than the width W of the extreme tip. Thus, writing is carried out by the extreme tip of the writing head only in the area of a magnetic layer on the disk heated by the resistance heater. Thus, the width of a data track on the disk is defined not by the shape of the extreme tip of the writing head but by the width of the resistance heater.

公开(公告)号：MY134107A

公开(公告)日：2007-11-30

申请号：MYPI20020085

申请日：2002-01-11

Applicant: IBM

Inventor： NEIL LESLIE ROBERTSON ,  RICHARD HSIAO ,  PATRICK RUSH WEBB

IPC: C25D7/00 ,  G11B5/147 ,  C23F4/00 ,  G11B5/17 ,  G11B5/31

Abstract: THE ELECTROPLATED COMPONENTS OF A MAGNBETIC HEAD OF THE PRESENT INVENTION ARE FABRICATED UTILIZING A SEED LAYER THAT IS SUSCEPTIBLE TO REACTIVE ION ETCH REMOVAL TECHNIQUES. A PREFERRED SEED LAYER COMPRISED OFF TUNGSTEN OR TITANIUM AND IT IS FABRICATED IN A SPUTTER DEPOSITION PROCESS. THE SEED LAYER IS ELECTRICALLY CONDUCTIVE AND THE ELECTROPLATED COMPONENTS, SUCH AS INDUCTION COIL MEMBERS AND MAGNETIC POLES, ARE EFFECTIVELY ELECTROPLATED INTO PHOTOLITHOGRAPHICALLY CREATED PHOYORESIST TRENCHES THAT ARE FABRICATED UPON THE SEED LAYER. FOLLOWING UPON THE SEED LAYER. FOLLOWING THE ELECTROPLATING OF THE COMPONENTS, THE PHOTORESTS LAYER IS REMOVED UTILIZING A STANDARD WET CHEMICAL PROCESS TO EXPOSE THE SEED LAYER. NEXT, UTILIZING A FLUORINE SPECIES REACTIVE ION PROCESS THE SEED LAYER IS REMOVED, AND SIGNIFICANTLY, THE FLUORINE SPECIES REACTIVE ION ETCH PROCESS THE SEED LAYER IS REMOVED AND SIGNIFICANTLY, THE FLUORINE RIE PROCESS REACTIVE ION ETCH PROCESS THE SEED LAYER IS REMOVED AND SIGNIFICANTLY THE FLUORINE RIE PROCESS CREATES A GASEOUS TUNGSTEN OR TITANIUM FLUORIDE COMPOUND REMOVAL PRODUCT . THE PROBLEM OF SEED LAYER REDEPOSITION ALONG THE SIDES OF THE ELECTROPLAED COMPONENTS IS OVERCOME BECAOUSE THE GASEOUS FLOURIDE COMPOUND IS NOT REDEPOSITED. ADDITIONALLY, BECAUSE THE FLUORINE RIE PROCESS DOES NOTSIGNIFICANTLY ATTACK THE ELECTROPLATED COMPONENTS, SUCH AS COPPER INDUCTION COIL MEMBERS AND NiFe MAGNETICC POLE MEMBERS, IT IS NOT NECESSARY TO ELECTROPLATE THESE COMPONENTS TO AN ADDITIONAL THICKNESS. THUS, THE INCREASE ASPECT RATIO PHOTORESIST TRENCHES THAT ARE PROBLEMATIC IN THE PRIOR ART ARE NOT REQUIRED. FURTHERMORE, OVERETCHING IS NOT A PROBLEM BECAUSE THE FLUORINE RIE DOES NOT ATTACK LAYERS, SUCH AS ALUMINIUM OXIDE INSULATION LAYERS LOCATED BENEATH THE SEED LAYER.@THE PRESSENT INVENTION ALSO INCLUDES AN ENHANCED TWO PART SEED LAYER, WHERE THE LOWER PART IS TUNGSTEN, TITANIUM OR TANTALUM AND THE UPPER PART IS COMPOSED OF THE MATERIAL THAT CONSTITUTES THE COMPONEN @

公开(公告)号：SG92801A1

公开(公告)日：2002-11-19

申请号：SG200103497

申请日：2001-06-14

Applicant: IBM

Inventor： PRAKASH KASIRAJ ,  NEIL LESLIE ROBERTSON ,  HEMANTHA KUMAR WICKRAMASINGHE

IPC: G11B5/02