公开(公告)号：JP2000252224A

公开(公告)日：2000-09-14

申请号：JP2000047152

申请日：2000-02-24

Applicant: IBM

Inventor： NESTOR A BOJAATSUAKU ,  SUPURATEIKU GUUHA ,  GUPTA ARUNAVA

IPC: H01L21/205 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing substantially a single crystal or polycrystal semiconductor structure on a host substrate at a low cost. SOLUTION: First, a layer made of nitride material with a wide band gap such as gallium nitride, aluminum nitride, indium nitride, etc., is adhered to a sapphire substrate 11. Next, a silicon structure 16 is grown on the nitride layer. A host substrate 18 is bonded to the exposed surface area of the semiconductor structure by a bonding agent. Then the sapphire substrate is lifted off through a metallization procedure for releasing a nitrogen from gallium, aluminum or indium.