公开(公告)号：JPH0323673A

公开(公告)日：1991-01-31

申请号：JP14754790

申请日：1990-06-07

Applicant: IBM

Inventor： KURISUTOFUAA FURANKU KOODERA ,  NIBO ROBUEDO ,  SEIKI OGURA

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78

Abstract: PURPOSE: To make the dynamic characteristic good by providing source and drain regions of a second conductivity type separated by channel regions on the surface of a semiconductor substrate of a first conductivity type, coupling drain extensions of a lower dopant concn. than that of the drain region with channels and providing gate electrodes thereon. CONSTITUTION: An N type source region 14 and N type drain region 16 of an IGFET 10 are formed while separating them by a channel portion 18. On a channel part 18, a gate structure 20 is formed, including a doped polycrystal, Al-Cu electrodes 22 covered with Si3 N4 side walls 26A, 26B at both sides through an SiO2 thin film 24. A lightly doped N type region 30 is added to the lower face of the source region 14, the ends are coupled with one end of the channel part 18, and N type region 28 on the top end of the drain region 16 is coupled with the other end of the channel region 18. This allows the gate length to be on the order of submicrons and makes the dynamic characteristic good.