公开(公告)号：JPH0254934A

公开(公告)日：1990-02-23

申请号：JP14977489

申请日：1989-06-14

Applicant: IBM

Inventor： SHIYAA AAKUBAA ,  PATORISHIA RABERII KUROOSEN ,  SEIKI OGURA ,  NIIIBO ROBEDO

IPC: H01L29/73 ,  G03C3/00 ,  H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737

Abstract: PURPOSE: To make a contact for reaching a subcollector needles so as to increase an operation speed by making a base contact expansion layer laterally contact a base layer and making a collector contact expanding layer to contact the base of a collector layer. CONSTITUTION: An FET 10 is provided with a collector layer 12, a base layer 14 and an emitter layer 16 besides including a sidewall insulator layer 18 arranged near and in contact with one side of one part each of the respective layers, also including a sidewall insulating layer 20 arranged near and in contact with other side of one part each of the layers 16, 14. Further, FET 10 is in contact with the other side of the layer 14 and being laterally extended and including a base contact extension layer 22 formed of a semiconductor material in the same conductive form with the layer 14 and being densely doped and the base contact interconnection 24 is arranged on the upper part surface 62 of the layer 22 being separated form the layer 16. A collector contact extension layer 26 is in contact with the layer 12 being laterally extended from one side of the layer 12. Then, the layer 26 is in contact with the base of the layer 12 being laterally extended.

公开(公告)号：JPH07169775A

公开(公告)日：1995-07-04

申请号：JP18564294

申请日：1994-08-08

Applicant: IBM

Inventor： SHIYAA AAKUBAA ,  PATORISHIA RABERII KUROOSEN ,  SEIKI OGURA ,  NIIIBO ROBEDO

IPC: H01L29/73 ,  G03C3/00 ,  H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737

Abstract: PURPOSE: To provide a bipolar transistor in which a structure with a base contact point extending-layer which extends to one side of an emitter and a subcollector extending-layer extending to the other side is provided, and no collector reacting through contact point is contained, enabling manufacturing with high integration density using a polysilicon emitter. CONSTITUTION: A subcollector layer 26 formed on an epitaxial layer 34, a collector layer 12 in contact with a subcollector layer 28, a base layer 14 on the collector layer 12 and a polysilicon emitter layer 16 on the base layer are contained. A base contact point extension layer 22 is provided, while being brought into contact with the base layer 14, and a top surface 62 thereof is put in a position lower than the lower surface of the emitter layer 16, so that the breakdown voltage of an emitter base is raised. A subcollector extension layer 30 in contact with the subcollector layer 26 is provided on the side opposite to the base contact point extension layer 22. Sidewall insulating-layers 18 and 20 are formed on a sidewall of an emitter, and mutually connected conductors 24 and 29 of a base and a collector are separated from the emitter.