公开(公告)号：JP2002075466A

公开(公告)日：2002-03-15

申请号：JP2000247050

申请日：2000-08-16

Applicant: IBM

Inventor： ODAOHARA SHIGEFUMI ,  NAKAGAWA HIROSHI ,  TSURUKAWA NOBORU ,  NISHIO TOMONORI

IPC: G01R31/36 ,  H01M10/44 ,  H01M10/48 ,  H02J7/00 ,  H02J7/34

Abstract: PROBLEM TO BE SOLVED: To detect a generation of a memory effect more accurately, while making a secondary cell operate as usual. SOLUTION: It is so regarded that a memory effect is generated, when a cell voltage during discharge is measured and the fact that the cell voltage is too low against the charging current, is detected. The electric power supply device comprises an intelligent cell 12 supplying electric power to a main body circuit, a current measuring circuit 30 measuring a current during discharge, a voltage measuring circuit 40 measuring a voltage during discharge, and a controller 15 detecting the generation of memory effect by judging whether the voltage during discharge measured against the current during discharge when the detected cell capacity is lower than the prescribed capacity, is lower than the prescribed voltage or not.