公开(公告)号：DE3681994D1

公开(公告)日：1991-11-21

申请号：DE3681994

申请日：1986-07-15

Applicant: IBM

Inventor： NIXON PAUL EDWARD ,  POLAVARAPU MURTY SURYANARAYANA ,  STANASOLOVICH DAVID

IPC: H01L21/302 ,  C03C15/00 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/60 ,  H01L21/31

Abstract: A process is disclosed for simultaneously etching holes in both the thick and thin portions (20, 21) of a dielectric layer on a semiconductor substrate (19). An anisotropic dry etchant is used to eliminate any significant lateral etching of the dielectric layer (28, 27) during etching. Thus, a mask-and-etch cycle may be eliminated from processing during integrated circuit manufacture, yet dimensional tolerances are maintained.