公开(公告)号：DE3572890D1

公开(公告)日：1989-10-12

申请号：DE3572890

申请日：1985-06-11

Applicant: IBM

Inventor： ISHAQ MOUSA HANNA ,  NOBLE WENDELL PHILLIPS

IPC: H01L27/10 ,  H01L21/265 ,  H01L21/3213 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/31 ,  H01L21/82

Abstract: A process is provided for making an improved dynamic random access memory cell structure, the process includes the steps of depositing a conductive layer (24, 26) on a surface of a semiconductor substrate (10) having a given type conductivity, depositing a layer of polysilicon (28) over the conductive layer, depositing a layer of photoresist (30) over the polysilicon layer, defining openings (32, 34) in the photoresist layer and implanting ions of a conductivity type opposite to that of the given type conductivity through the openings and the polysilicon layer into the semiconductor substrate to form therein a conductive pocket or region having the opposite type conductivity resulting in a highly conductive and self-aligned storage node plate and bitisense line, respectively, of said dynamic memory cell structure.