公开(公告)号：DE3482679D1

公开(公告)日：1990-08-16

申请号：DE3482679

申请日：1984-08-23

Applicant: IBM

Inventor： ISHAQ MOUSA HANNA ,  ROBERTS STANLEY ,  RYAN JAMES GARDNER

IPC: H01L21/28 ,  H01L21/225 ,  H01L21/285 ,  H01L21/60

Abstract: @ A method for diffusing a conductivity determining impurity in a semiconductor substrate (10) and making electrical contact thereto by depositing a layer (18) of a rare earth boride material over a predetermined surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the boride material to diffuse into the adjoining portion of the substrate (20, 22) to modify its conductive characteristics. At the same time a good electrical ohmic contact is established between the boride material and the adjoining substrate portion while the boride material retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment.

公开(公告)号：DE3370558D1

公开(公告)日：1987-04-30

申请号：DE3370558

申请日：1983-05-25

Applicant: IBM

Inventor： HSIEH NING ,  IRENE EUGENE ARTHUR ,  ISHAQ MOUSA HANNA ,  ROBERTS STANLEY

IPC: C01B33/12 ,  B05D5/12 ,  C01B33/113 ,  H01B3/02 ,  H01G2/12 ,  H01G4/06 ,  H01G4/08 ,  H01G4/10 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L27/04 ,  H01L29/94

Abstract: An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400°C or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.

公开(公告)号：DE3572890D1

公开(公告)日：1989-10-12

申请号：DE3572890

申请日：1985-06-11

Applicant: IBM

Inventor： ISHAQ MOUSA HANNA ,  NOBLE WENDELL PHILLIPS

IPC: H01L27/10 ,  H01L21/265 ,  H01L21/3213 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/31 ,  H01L21/82

Abstract: A process is provided for making an improved dynamic random access memory cell structure, the process includes the steps of depositing a conductive layer (24, 26) on a surface of a semiconductor substrate (10) having a given type conductivity, depositing a layer of polysilicon (28) over the conductive layer, depositing a layer of photoresist (30) over the polysilicon layer, defining openings (32, 34) in the photoresist layer and implanting ions of a conductivity type opposite to that of the given type conductivity through the openings and the polysilicon layer into the semiconductor substrate to form therein a conductive pocket or region having the opposite type conductivity resulting in a highly conductive and self-aligned storage node plate and bitisense line, respectively, of said dynamic memory cell structure.