公开(公告)号：MY126357A

公开(公告)日：2006-09-29

申请号：MYPI9705548

申请日：1997-11-19

Applicant: IBM

Inventor： NOBLE WENDLE P ,  GHATALIA ASHWIN K ,  EL-KAREH BADIH

IPC: H01L21/08 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8232 ,  H01L27/08 ,  H01L29/00 ,  H01L29/76 ,  H01L29/78

Abstract: A SEMICONDUCTOR STRUCTURE COMPRISING A TRANSISTOR (39, 139) HAVING A GATE CONDUCTOR (16, 116) THAT HAS FIRST AND SECOND EDGES BOUNDED BY RAISED ISOLATION STRUCTURES (30) (E.G. STI).A SOURCE DIFFUSION IS SELF-ALIGNED TO THE THIRD EDGE AND A DRAIN DIFFUSION IS SELF-ALIGNED TO THE FOURTH EDGE OF THE GATE ELECTRODE.(FIG 8)