公开(公告)号：US3882391A

公开(公告)日：1975-05-06

申请号：US37304273

申请日：1973-06-25

Applicant: IBM

Inventor： LILES ROBERT E ,  O'ROURKE GERALD D

IPC: H01L29/78 ,  G01R31/26 ,  G01R31/316 ,  H01L21/31 ,  H01L21/66 ,  H01L21/822 ,  H01L27/04

CPC classification number: G01R31/316 ,  G01R31/2621

Abstract: A method for testing the threshold stability of a MOSFET device including a phosphosilicate glass (PSG) thin film which covers the gate insulator to trap contaminants. The test comprises an electric field stress at ambient temperature for a short interval to determine polarization of the PSG film. The flat band potentials (VFB) measured before and after the stress period are used to determine whether the amount of PSG is sufficient to trap the contaminants present.

Abstract translation: 一种用于测试包括覆盖栅极绝缘体以捕获污染物的磷硅酸盐玻璃（PSG）薄膜的MOSFET器件的阈值稳定性的方法。 该测试包括在环境温度下短时间间隔的电场应力以确定PSG膜的极化。 在应力周期之前和之后测量的平带电位（VFB）用于确定PSG的量是否足以捕获存在的污染物。

公开(公告)号：FR2296938A1

公开(公告)日：1976-07-30

申请号：FR7536911

申请日：1975-11-28

Applicant: IBM

Inventor： BHATIA HARSARAN S ,  O'ROURKE GERALD D ,  WIEDMANN SIEGFRIED K

IPC: H01L27/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L27/06 ,  H01L29/76

公开(公告)号：CA1017462A

公开(公告)日：1977-09-13

申请号：CA198773

申请日：1974-05-02

Applicant: IBM

Inventor： COLLINS ROBERT H ,  LEVINE RICHARD F ,  NORTH WILLIAM D ,  O'ROURKE GERALD D ,  PARKER GERALD R

IPC: H01L29/78 ,  H01L21/283 ,  H01L29/00 ,  H01L29/51 ,  H01L29/76

公开(公告)号：CA1030664A

公开(公告)日：1978-05-02

申请号：CA239235

申请日：1975-11-04

Applicant: IBM

Inventor： BHATIA HARSARAN S ,  O'ROURKE GERALD D ,  WIEDMANN SIEGFRIED K

IPC: H01L27/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/78