公开(公告)号：DE1190106B

公开(公告)日：1965-04-01

申请号：DEJ0019237

申请日：1960-12-29

Applicant: IBM

Inventor： ANDERSON RICHARD LOUIS ,  MARINACE JOHN CARTER ,  O'ROURKE MARY JACQUELINE

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L29/00

公开(公告)号：DE1180849B

公开(公告)日：1964-11-05

申请号：DEJ0019240

申请日：1960-12-30

Applicant: IBM

Inventor： ANDERSON RICHARD L ,  O'ROURKE MARY JACQUELINE

IPC: H01L21/205 ,  H01L27/00 ,  H01L29/00 ,  H01L31/0687

Abstract: 916,889. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 22, 1960 [Dec. 30, 1959], No. 44023/60. Class 37. A semi-conductor structure comprises zones of alternate conductivity types meeting at PN junctions which are alternately of tunnel and normal type. The arrangement provides a device having a current-voltage characteristic as shown in Fig. 5. The tunnel junctions have successively increasing impurity concentrations to provide characteristics with successively increasing values. The arrangement may also be used to provide a photo-electric voltage provided by the normal junctions which are effectively connected in series by the tunnel junctions. Fig. 4 shows the device with tunnel junctions 12a-12d and normal PN junctions 13a-13c. The device may be manufactured by epitaxial deposition as described in Specification 916,887 such as by providing sources of germanium, iodine and gallium tri-iodide which deposit on a substrate of germanium. The resistivity of the deposit is controlled by controlling the ratio of the impurity (gallium iodide) to germanium iodide. The impurity concentration at each tunnel junction is increased to be slightly greater than the previous one. All the semi-conductor zones have a high impurity content and the device exhibits a low resistance to both alternating and direct current. The semi-conductor material may alternately consist of silicon, indium antimonide, gallium antimonide or gallium arsenide and the impurities of aluminium, boron, indium, arsenic or phosphorus.