公开(公告)号：DE19506745C2

公开(公告)日：1996-12-19

申请号：DE19506745

申请日：1995-02-27

Applicant: IBM

Inventor： OEHRLEIN GOTTLIEB STEFAN ,  VENDER DAVID ,  ZHANG YING ,  HAVERLAG MARCO

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

公开(公告)号：DE19506745A1

公开(公告)日：1995-09-14

申请号：DE19506745

申请日：1995-02-27

Applicant: IBM

Inventor： OEHRLEIN GOTTLIEB STEFAN ,  VENDER DAVID ,  ZHANG YING ,  HAVERLAG MARCO

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

Abstract: Apparatus for etching substrates using a plasma gas current includes a deposit resistant surface surrounding the substrate in its holder. Means are provided for heating the surface to 100-600 deg C in order to prevent unwanted material deposition. Use - In the etching of semiconductor components. Advantage - Effectively prevents the deposition of unwanted coatings on the inside walls of the apparatus without harming the flow of plasma over the substrate.