公开(公告)号：DE68926440D1

公开(公告)日：1996-06-13

申请号：DE68926440

申请日：1989-12-12

Applicant: IBM

Inventor： JOSHI RAJIY V ,  OH CHOON-SIK ,  MOY DAN

IPC: H01L21/3205 ,  C23C16/08 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/52

Abstract: Selective deposition of a refractory metal on a silicon substrate utilizing high temperatures and a silane reduction process in which the flow rate ratio of silane to refractory metal halide gas is less than one. In a second embodiment, an additional layer of the refractory metal is deposited utilizing a hydrogen reduction of the metal halide gas at very high temperatures. In both embodiments, a refractory metal barrier layer may be provided by forming a self-aligned refractory metal silicide layer. Alternatively, a two layer self-aligned barrier is formed of a refractory metal silicide lower layer and a refractory metal nitride upper layer and the refractory metal is selectively deposited on the metal nitride.

公开(公告)号：DE68926440T2

公开(公告)日：1996-11-07

申请号：DE68926440

申请日：1989-12-12

Applicant: IBM

Inventor： JOSHI RAJIY V ,  OH CHOON-SIK ,  MOY DAN

IPC: H01L21/3205 ,  C23C16/08 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/52

Abstract: Selective deposition of a refractory metal on a silicon substrate utilizing high temperatures and a silane reduction process in which the flow rate ratio of silane to refractory metal halide gas is less than one. In a second embodiment, an additional layer of the refractory metal is deposited utilizing a hydrogen reduction of the metal halide gas at very high temperatures. In both embodiments, a refractory metal barrier layer may be provided by forming a self-aligned refractory metal silicide layer. Alternatively, a two layer self-aligned barrier is formed of a refractory metal silicide lower layer and a refractory metal nitride upper layer and the refractory metal is selectively deposited on the metal nitride.