公开(公告)号：CA2741149A1

公开(公告)日：2010-07-08

申请号：CA2741149

申请日：2009-10-14

Applicant: IBM

Inventor： PARKIN STUART

IPC: G11C19/08

Abstract: A racetrack memory storage device moves domain walls along the racetrack in one direction only. The reading element can be positioned at one end of the racetrack (rather than in the middle of the racetrack). The domain walls are annihilated upon moving them across the reading element but their corresponding information is read into one or more memory devices (e.g., built-in CMOS circuits). The information can then be processed in circuits for computational needs and written back into the racetrack either in its original form (as it was read out of the racetrack) or in a different form after some computation, using a writing element positioned at the end of the racetrack opposite to the reading element. Such a racetrack can be built more simply and has greater reliability of operation than previous racetrack memory devices.

公开(公告)号：DE69019485T2

公开(公告)日：1996-01-25

申请号：DE69019485

申请日：1990-10-30

Applicant: IBM

Inventor： PARKIN STUART ,  ROCHE KEVIN PATRICK ,  SPERIOSU VIRGIL SIMON

IPC: G01R33/09 ,  G11B5/39

Abstract: An improved thin'film magnetoresistive (MR) sensor uses an alloy comprising Fe(1-x)Mnx where x is within the range of 0.3 to 0.4, as an antiferromagnetic layer to provide longitudinal exchange bias in the ferromagnetic MR layer. In a specific embodiment the exchange bias is at a high level and is independent of thickness of the antiferromagnetic layer over a wide range.

公开(公告)号：DE69019485D1

公开(公告)日：1995-06-22

申请号：DE69019485

申请日：1990-10-30

Applicant: IBM

Inventor： PARKIN STUART ,  ROCHE KEVIN PATRICK ,  SPERIOSU VIRGIL SIMON

IPC: G01R33/09 ,  G11B5/39

Abstract: An improved thin'film magnetoresistive (MR) sensor uses an alloy comprising Fe(1-x)Mnx where x is within the range of 0.3 to 0.4, as an antiferromagnetic layer to provide longitudinal exchange bias in the ferromagnetic MR layer. In a specific embodiment the exchange bias is at a high level and is independent of thickness of the antiferromagnetic layer over a wide range.