-
公开(公告)号：SG42852A1
公开(公告)日：1997-10-17
申请号：SG1996000144
申请日：1992-02-05
Applicant: IBM
Inventor： PAPWORTH-PARKIN STUART STEPHEN , ROCHE KEVIN PATRICK
Abstract: Described is a magnetoresistive (MR) sensor comprising a multilayered structure formed on a substrate includes alternating layers of a ferromagnetic material (12) and copper (14). The ferromagnetic material and the copper form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed. Also described is a sensor having a quadlayer structure which comprises alternating layers of a first and second ferromagnetic material and a non-magnetic metallic material.
-
公开(公告)号：CA2060561C
公开(公告)日：1998-05-05
申请号：CA2060561
申请日：1992-02-03
Applicant: IBM
Inventor： ROCHE KEVIN PATRICK , PARKIN STUART STEPHEN PAPWORTH
Abstract: A magnetoresistive (MR) sensor comprising a multilayered structure formed on a substrate includes alternating layers of a ferromagnetic material and a non-magnetic metallic material. The ferromagnetic material and the non-magnetic material form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed.
-
公开(公告)号：DE69019485T2
公开(公告)日：1996-01-25
申请号：DE69019485
申请日：1990-10-30
Applicant: IBM
Inventor： PARKIN STUART , ROCHE KEVIN PATRICK , SPERIOSU VIRGIL SIMON
Abstract: An improved thin'film magnetoresistive (MR) sensor uses an alloy comprising Fe(1-x)Mnx where x is within the range of 0.3 to 0.4, as an antiferromagnetic layer to provide longitudinal exchange bias in the ferromagnetic MR layer. In a specific embodiment the exchange bias is at a high level and is independent of thickness of the antiferromagnetic layer over a wide range.
-
公开(公告)号：DE69019485D1
公开(公告)日：1995-06-22
申请号：DE69019485
申请日：1990-10-30
Applicant: IBM
Inventor： PARKIN STUART , ROCHE KEVIN PATRICK , SPERIOSU VIRGIL SIMON
Abstract: An improved thin'film magnetoresistive (MR) sensor uses an alloy comprising Fe(1-x)Mnx where x is within the range of 0.3 to 0.4, as an antiferromagnetic layer to provide longitudinal exchange bias in the ferromagnetic MR layer. In a specific embodiment the exchange bias is at a high level and is independent of thickness of the antiferromagnetic layer over a wide range.
-
-
-
Search Results
4
records
(took 0.02 seconds)
