公开(公告)号：BR9200322A

公开(公告)日：1992-10-13

申请号：BR9200322

申请日：1992-01-31

Applicant: IBM

Inventor： PARKIN STUART S PAPWORTH ,  ROCHE KEVIN P

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/10

Abstract: Described is a magnetoresistive (MR) sensor comprising a multilayered structure formed on a substrate includes alternating layers of a ferromagnetic material (12) and copper (14). The ferromagnetic material and the copper form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed. Also described is a sensor having a quadlayer structure which comprises alternating layers of a first and second ferromagnetic material and a non-magnetic metallic material.