MAGNETORESISTIVE SENSOR BASED ON OSCILLATIONS IN THE MAGNETORESISTANCE

    公开(公告)号:CA2060561A1

    公开(公告)日:1992-08-09

    申请号:CA2060561

    申请日:1992-02-03

    Applicant: IBM

    Abstract: Described is a magnetoresistive (MR) sensor comprising a multilayered structure formed on a substrate includes alternating layers of a ferromagnetic material (12) and copper (14). The ferromagnetic material and the copper form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed. Also described is a sensor having a quadlayer structure which comprises alternating layers of a first and second ferromagnetic material and a non-magnetic metallic material.

    2.
    发明专利
    未知

    公开(公告)号:BR9200322A

    公开(公告)日:1992-10-13

    申请号:BR9200322

    申请日:1992-01-31

    Applicant: IBM

    Abstract: Described is a magnetoresistive (MR) sensor comprising a multilayered structure formed on a substrate includes alternating layers of a ferromagnetic material (12) and copper (14). The ferromagnetic material and the copper form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed. Also described is a sensor having a quadlayer structure which comprises alternating layers of a first and second ferromagnetic material and a non-magnetic metallic material.

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