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1.发明申请
公开(公告)号：WO2008049844B1
公开(公告)日：2008-06-12
申请号：PCT/EP2007061360
申请日：2007-10-23
Applicant: IBM , IBM UK , AZPIROZ JAIONE TIRAPU , HUANG WU-SONG , LAWSON MARGARET , PATEL KAUSHAL
Inventor： AZPIROZ JAIONE TIRAPU , HUANG WU-SONG , LAWSON MARGARET , PATEL KAUSHAL
CPC classification number: G03F7/095 , G03F1/56 , G03F7/70466
Abstract: A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.
Abstract translation: 在衬底上形成图案化材料层的方法。 在基板上形成光致抗蚀剂层，然后在光致抗蚀剂上形成图像改性材料。 图像修改材料被图案化以形成图像修改图案。 然后将图像修改图案和下面的光致抗蚀剂暴露于合适的辐射。 图像修改图案修改图像修改图案下方的光致抗蚀剂层内的图像强度。 然后将所得图案转移到基底中。
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公开(公告)号：DE602006011927D1
公开(公告)日：2010-03-11
申请号：DE602006011927
申请日：2006-08-31
Applicant: IBM
Inventor： HUANG WU-SONG , HEATH WILLIAM , PATEL KAUSHAL , VARANASI PUSHKARA
IPC: G03F7/09
Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
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公开(公告)号：AT456076T
公开(公告)日：2010-02-15
申请号：AT06793113
申请日：2006-08-31
Applicant: IBM
Inventor： HUANG WU-SONG , HEATH WILLIAM , PATEL KAUSHAL , VARANASI PUSHKARA
IPC: G03F7/09
Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
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