公开(公告)号：DE602006011927D1

公开(公告)日：2010-03-11

申请号：DE602006011927

申请日：2006-08-31

Applicant: IBM

Inventor： HUANG WU-SONG ,  HEATH WILLIAM ,  PATEL KAUSHAL ,  VARANASI PUSHKARA

IPC: G03F7/09

Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.

公开(公告)号：AT456076T

公开(公告)日：2010-02-15

申请号：AT06793113

申请日：2006-08-31

Applicant: IBM

Inventor： HUANG WU-SONG ,  HEATH WILLIAM ,  PATEL KAUSHAL ,  VARANASI PUSHKARA

IPC: G03F7/09

Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.

公开(公告)号：GB2486851A

公开(公告)日：2012-06-27

申请号：GB201206101

申请日：2011-01-07

Applicant: IBM

Inventor： LIU SEN ,  VARANASI PUSHKARA

IPC: G03F7/004

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193nm (ArF) lithography.

公开(公告)号：GB2486851B

公开(公告)日：2014-01-01

申请号：GB201206101

申请日：2011-01-07

Applicant: IBM

Inventor： LIU SEN ,  VARANASI PUSHKARA

IPC: G03F7/004

公开(公告)号：DE112011100086T8

公开(公告)日：2012-11-15

申请号：DE112011100086

申请日：2011-01-07

Applicant: IBM

Inventor： VARANASI PUSHKARA ,  LIU SEN

IPC: G03F7/004

公开(公告)号：DE112011100086T5

公开(公告)日：2012-10-31

申请号：DE112011100086

申请日：2011-01-07

Applicant: IBM

Inventor： VARANASI PUSHKARA ,  LIU SEN

IPC: G03F7/004

Abstract: Die vorliegende Erfindung betrifft einen fluorfreien Fotosäuregenerator (PAG) und eine Fotoresist-Zusammensetzung, die ihn enthält. Der PAG ist durch das Vorhandensein einer Oniumkation-Komponente und einer fluorfreien, anionischen heteroaromatischen Sulfonat-Komponente mit kondensierten Ringen und einem oder mehreren elektronenziehenden Substituenten gekennzeichnet. Die Oniumkation-Komponente des PAG ist vorzugsweise ein Sulfonium- oder ein Iodonium-Kation. Die Fotoresist-Zusammensetzung enthält ferner ein säureempfindliches Bildgebungspolymer. Die Fotoresist-Zusammensetzung ist besonders zum Bilden von Materialstrukturen auf einem Halbleitersubstrat unter Verwendung von 193-nm-(ArF)-Lithographie verwendbar.