公开(公告)号：JPH1154756A

公开(公告)日：1999-02-26

申请号：JP20405697

申请日：1997-07-30

Applicant: IBM

Inventor： MASSIMO VINCENZO FISCHETTI ,  PATRICIA MAY MOONEY ,  TIWARI SANDIP

IPC: H01L21/762 ,  H01L21/336 ,  H01L21/76 ,  H01L27/08 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To raise the mobility of holes and electrons, by causing a first region of a semiconductor layer to surround a second region nearly, making the first region larger than the initial volume of a substance, causing the second region to receive a compressive stress, taking the regeneration of a valence band off in consequence, and decreasing the band edge mass of a carrier such as a hole and so forth. SOLUTION: By oxidation of a peripheral region to be protected by a mask 116, a silicon dioxide surrounding silicon below the mask 116 expands. A layer 114 not being protected is perfectly oxidized and an oxide layer 118 is formed, and a silicon region 119 remains from the layer 114. The mask 116 remains on the silicon region 119. The expansion of volume of the silicon dioxide is slightly larger than the factor of 2, and the molecular weight of the silicon amounts to 12.056 cm . By this expansion, a compressive stress is generated in the silicon region 119 between them. It is possible to form an element such as a p-channel field-effect transistor, etc., on the silicon region 119, following exfoliation of the mask 116. Hole mobility is improved by the compression stress.