公开(公告)号：JPH11329999A

公开(公告)日：1999-11-30

申请号：JP7760399

申请日：1999-03-23

Applicant: IBM

Inventor： JAMES W ADKISSON ,  JEROME B LASKEY ,  PAUL W PASTEL ,  JEDDO H RANKIN

IPC: H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To provide an advanced method for forming flat separate areas between devices. SOLUTION: An oxygen injection 5 is performed to form a buried oxide layer in a substrate 4. Dielectric masking materials 1, 2, and 3 are used to change a depth for implanting ions 5 in accordance with a shape of a dielectric masking layer, and the buried oxide layer is formed. It is also preferable to form an inclined mask to release stress and to provide a continuous oxide thin film.