公开(公告)号：JP2001274394A

公开(公告)日：2001-10-05

申请号：JP2001048699

申请日：2001-02-23

Applicant: IBM

Inventor： BALLANTINE ARNE ,  RAYNER E GEERESU ,  HOOK TERENCE B ,  PETER SUMEISU

IPC: H01L21/76 ,  H01L21/28 ,  H01L29/772 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for controlling dispersion of ion implantation and diffusion of dopant in an field effect transistor(FET) with a shallow junction that reduces a short-channel effect, and provide a device in this method. SOLUTION: The method includes a step for etching part of a polysilicon layer and exposing part of a gate dielectric 304; a step for forming a first oxide material 400 on the remaining polysilicon layer; a step for etching part of dielectric layer, exposing an isolation region 302, and forming a trench 500 in the substrate; a step for forming a second oxide layer 600 on the trench; a step for providing a spacer 700 adjoining to the first oxide layer and located on a part of the second oxide layer; a step for removing the exposing part of the second oxide layer and exposing a surface 800 of the trench; a step for removing the spacer 700; and a step for providing a semiconductor 1000 on the second oxide layer and the exposed surface of the trench.