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公开(公告)号：DE69627086D1
公开(公告)日：2003-05-08
申请号：DE69627086
申请日：1996-08-19
Applicant: IBM
Inventor： AGAHI FARID , PEZESHKI BARDIA , KASH JEFFREY ALAN , WELSER JEFFREY JOHN
Abstract: This invention describes how commercial silicon-on-insulator material can be used to fabricate both wavelength filters and wavelength-selective photodetectors. The silicon-on-insulator substrates (100) have a buried silicon dioxide layer (102) and a thin top silicon layer (104) and are manufactured for high speed electronics applications. However, in this invention, the thin silicon layer (104) is used as the core of a waveguide and the buried silicon dioxide (102) as a lower cladding region. Another cladding layer (106) and a low index waveguide (108) is fabricated on the commercial substrate to form an asymmetric waveguide coupler structure. The added low index waveguide (108) and the original thin silicon layer (104) form the two waveguides of the coupler. Since the two waveguide materials have very different indices of refraction, they are only phase-matched at one wavelength (111). Thus for a given thickness of materials, only one wavelength (111) couples between the two waveguides (104, 108). By adding an absorptive layer in the silicon waveguide and electrical contacts, wavelength sensitive photodetection is obtained. The buried insulator layer (102) is the key to device operation, providing a very low index buried cladding region.
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公开(公告)号：DE69601388T2
公开(公告)日：1999-09-02
申请号：DE69601388
申请日：1996-04-09
Applicant: IBM
Inventor： KASH JEFFREY ALAN , PEZESHKI BARDIA , TONG FRANKLIN FUK-KAY
Abstract: The asymmetric dual waveguide laser structure oscillates light in a single longitudinal mode. The structure has a pair of coupled but dissimilar waveguides that are collinear with each other. The waveguides are of such a length that frequency selective coupling between them can discriminate between wavelengths corresp. to different longitudinal modes. Each waveguide has semiconductor material capable of providing optical gain when electrically excited to therefore form a lasing medium. A pair of mirrors are placed at opposite ends of the waveguides with one waveguide having a mirror on its left side and the other waveguide having a mirror on its right side, thus providing feedback for laser oscillation. A mirror is in contact with and separates the pair of waveguides, so that only the light coupled between the pair of waveguides experiences net optical gain.
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公开(公告)号：DE69601388D1
公开(公告)日：1999-03-04
申请号：DE69601388
申请日：1996-04-09
Applicant: IBM
Inventor： KASH JEFFREY ALAN , PEZESHKI BARDIA , TONG FRANKLIN FUK-KAY
Abstract: The asymmetric dual waveguide laser structure oscillates light in a single longitudinal mode. The structure has a pair of coupled but dissimilar waveguides that are collinear with each other. The waveguides are of such a length that frequency selective coupling between them can discriminate between wavelengths corresp. to different longitudinal modes. Each waveguide has semiconductor material capable of providing optical gain when electrically excited to therefore form a lasing medium. A pair of mirrors are placed at opposite ends of the waveguides with one waveguide having a mirror on its left side and the other waveguide having a mirror on its right side, thus providing feedback for laser oscillation. A mirror is in contact with and separates the pair of waveguides, so that only the light coupled between the pair of waveguides experiences net optical gain.
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公开(公告)号：DE69627086T2
公开(公告)日：2004-02-26
申请号：DE69627086
申请日：1996-08-19
Applicant: IBM
Inventor： AGAHI FARID , PEZESHKI BARDIA , KASH JEFFREY ALAN , WELSER JEFFREY JOHN
Abstract: This invention describes how commercial silicon-on-insulator material can be used to fabricate both wavelength filters and wavelength-selective photodetectors. The silicon-on-insulator substrates (100) have a buried silicon dioxide layer (102) and a thin top silicon layer (104) and are manufactured for high speed electronics applications. However, in this invention, the thin silicon layer (104) is used as the core of a waveguide and the buried silicon dioxide (102) as a lower cladding region. Another cladding layer (106) and a low index waveguide (108) is fabricated on the commercial substrate to form an asymmetric waveguide coupler structure. The added low index waveguide (108) and the original thin silicon layer (104) form the two waveguides of the coupler. Since the two waveguide materials have very different indices of refraction, they are only phase-matched at one wavelength (111). Thus for a given thickness of materials, only one wavelength (111) couples between the two waveguides (104, 108). By adding an absorptive layer in the silicon waveguide and electrical contacts, wavelength sensitive photodetection is obtained. The buried insulator layer (102) is the key to device operation, providing a very low index buried cladding region.
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