公开(公告)号：JPH1012945A

公开(公告)日：1998-01-16

申请号：JP5368997

申请日：1997-03-07

Applicant: IBM

Inventor： JONATHAN ZANHON SAN ,  ARANABA GAPUTA ,  GAN KIANO ,  PHILIP LEWIS SUROOIROUDO ,  PHILIPPE P REKOEA

IPC: G01R33/09 ,  G11B5/33 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To provide a three layer thin film reluctance element where a current is transported through a three layer structure by employing an additional perovskite manganate thin film as a ferromagnetic element. SOLUTION: A three layer thin film reluctance element 5 comprises a first or lowermost thin film magnetic layer 2, a second or intermediate layer 3, and a third or uppermost thin film magnetic layer 4, wherein at least one of the first or third layer 2, 4 is an additional manganate perovskite. According to the structure, variation of the reluctance can be substantially doubled in a low field of 150Oe or below close to the saturated coercive force of the element material. Low field spin dependent transportation is achieved in the manganate of the element and the resultant magnitude of magnetoresistance is suitable for a magnetoresistive magnetic field sensor application.