MAGNETIC TUNNEL JUNCTION CAPABLE OF CONTROL MAGNETIC RESPONSE

    公开(公告)号:JPH104227A

    公开(公告)日:1998-01-06

    申请号:JP5877797

    申请日:1997-03-13

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To control magnetoresistance response to a magnetic signal by a method wherein a constrained ferromagnetic layer, having a side part circumfer ence which is not extended over the side part circumference of an insulating tunnel layer, is retained within the another spaced plane surface without overlap ping with an insulating tunnel layer. SOLUTION: Write in an MJT is attained by allowing a current to flow through the upper and lower electrode wiring layers on the memory cell application of a magnetic tunnel junction MTJ element. When a sufficiently large current is allowed to flow through the above-mentioned lines, the magnetization direction of a free ferromagnetic layer 32 is rotated in reverse parallel from parallel to the magnetization direction of a constrained ferromagnetic layer 18 by the coupled magnetic field formed in the vicinity of a free ferromagnetic layer 32. Current level is selected in such a manner that the coupling magnetic field to be formed exceeds the switching field of the free ferromagnetic layer. The magnetic field formed by a coupling write-in current is selected smaller than the magnetic field required for rotation of the magnetization direction of the constrained ferromagnetic layer.

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