公开(公告)号：DE3277755D1

公开(公告)日：1988-01-07

申请号：DE3277755

申请日：1982-12-20

Applicant: IBM

Inventor： PLATTER VALERIA ,  ROTHMAN LAURA B ,  SCHAIBLE PAUL M ,  SCHWARTZ GERALDINE C

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/532 ,  H05K3/46 ,  H01L21/90 ,  H01L23/52

Abstract: Coplanar conductor/insulator films with at least one level of metallization are produced by forming on a substrate a conductive pattern (5A, 6A) of a composite consisting of a lower layer (5A) of an aluminum based metal and an upper layer (6A) of hafnium with a coating (7A) of magnesium oxide covering its top surface, blanket depositing a layer of dielectic material whose thickness equals that of the conductive pattern, and wet etching said coating (7) of magnesium oxide for removal thereof together with the overlying portions of said dielectric coating thereon. … To produce structures with interconnected, coplanar conductor/insulator films on different levels the above process steps are repeated once or several times. … The hatnium layer is used to protect the aluminum based metal during the removal of the magnesium oxide, and as a registration enhancer for subsequent electron-beam processing.

公开(公告)号：DE2313106A1

公开(公告)日：1973-10-11

申请号：DE2313106

申请日：1973-03-16

Applicant: IBM

Inventor： PLATTER VALERIA ,  SCHWARTZ GERALDINE COGIN

IPC: C25D11/04 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3063 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01B5/14