公开(公告)号：DE2313106A1

公开(公告)日：1973-10-11

申请号：DE2313106

申请日：1973-03-16

Applicant: IBM

Inventor： PLATTER VALERIA ,  SCHWARTZ GERALDINE COGIN

IPC: C25D11/04 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3063 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01B5/14

公开(公告)号：DE3786851T2

公开(公告)日：1994-03-17

申请号：DE3786851

申请日：1987-05-05

Applicant: IBM

Inventor： BENNETT REID STUART ,  EPHRATH LINDA MERO ,  SCHWARTZ GERALDINE COGIN ,  SELWYN GARY STEWART

IPC: H01L21/302 ,  C23F1/00 ,  G01N21/64 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23F4/00

Abstract: Laser induced fluorescence is utilized to detect the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a wafer selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to any of the other layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are de-energized.

公开(公告)号：DE2861271D1

公开(公告)日：1982-01-07

申请号：DE2861271

申请日：1978-11-27

Applicant: IBM

Inventor： SCHAIBLE PAUL MARTIN ,  SCHWARTZ GERALDINE COGIN ,  ROTHMAN LAURA BETH

IPC: B01J19/00 ,  C23F1/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/3213

Abstract: Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching.

公开(公告)号：DE3786851D1

公开(公告)日：1993-09-09

申请号：DE3786851

申请日：1987-05-05

Applicant: IBM

Inventor： BENNETT REID STUART ,  EPHRATH LINDA MERO ,  SCHWARTZ GERALDINE COGIN ,  SELWYN GARY STEWART

IPC: H01L21/302 ,  C23F1/00 ,  G01N21/64 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23F4/00

Abstract: Laser induced fluorescence is utilized to detect the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a wafer selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to any of the other layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are de-energized.

公开(公告)号：DE3175779D1

公开(公告)日：1987-02-05

申请号：DE3175779

申请日：1981-08-05

Applicant: IBM

Inventor： LOGAN JOSEPH SKINNER ,  MAUER IV JOHN LESTER ,  ROTHMAN LAURA BETH ,  SCHWARTZ GERALDINE COGIN ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/48 ,  H01L21/768 ,  H01L23/522 ,  H01L23/52 ,  H01L21/90 ,  H01L23/54

公开(公告)号：DE3268937D1

公开(公告)日：1986-03-20

申请号：DE3268937

申请日：1982-06-15

Applicant: IBM

Inventor： ELDRIDGE JEROME MICHAEL ,  LEE MICHAEL HEIWO ,  SCHWARTZ GERALDINE COGIN

IPC: C23F4/00 ,  C23C8/10 ,  C23F1/00 ,  C23F1/20 ,  H01L21/302 ,  H01L21/316 ,  C23C8/00 ,  C23F17/00 ,  C23C14/00

Abstract: Aluminium-based alloy films and metallization layers that are patterned by reactive ion etching (RIE) are passivated by etching surface portions of the films or layers with a phosphoric-chromic mixture to remove contaminants and then oxidizing the exposed surface portions in an oxygen atmosphere.

公开(公告)号：DE3168374D1

公开(公告)日：1985-02-28

申请号：DE3168374

申请日：1981-10-20

Applicant: IBM

Inventor： SCHAIBLE PAUL MARTIN ,  SCHWARTZ GERALDINE COGIN

IPC: H01L21/302 ,  C23F1/00 ,  C23F4/00 ,  H01L21/3065 ,  H05K3/06 ,  H05K3/38 ,  H01L21/88

Abstract: A composite mask (5A, 6A) is formed by sequentially depositing blanket layers (5) and (6) of molybdenum and of a material respectively selected from the group consisting of MgO and Al2O3 on the surface of a copper layer (3), and producing in these layers (5) and (6) a pattern of openings corresponding to the negative of the desired copper pattern (3). Using said mask (5A, 6A) the portions of copper layer (3) exposed in said openings are removed, preferably by dry etching. MgO or Al2O3 adhere well to Mo and Mo adheres well to copper. The Mo layer (5A) also serves as a diffusion barrier for the copper. … The method is applicable in forming copper interconnect metallurgy for components such as semiconductor or dielectric substrates.

公开(公告)号：DE2964545D1

公开(公告)日：1983-02-24

申请号：DE2964545

申请日：1979-08-23

Applicant: IBM

Inventor： ELDRIDGE JEROME MICHAEL ,  LEE WEN-YAUNG ,  SCHWARTZ GERALDINE COGIN

IPC: H01L21/302 ,  C23C8/12 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52 ,  C23F7/06 ,  C23F1/00 ,  C23C15/00 ,  H01L21/88

Abstract: Aluminium microcircuits which have been prepared by reactive-ion etching are stablized against open circuits and short circuits by treating the microcircuits in an oxygen-containing atmosphere at a temperature of from 200 DEG C to 450 DEG C.

公开(公告)号：DE2617483A1

公开(公告)日：1976-12-09

申请号：DE2617483

申请日：1976-04-22

Applicant: IBM

Inventor： HARVILCHUCK JOSEPH MATTHEW ,  LOGAN JOSEPH SKINNER ,  METZGER WILLIAM CLIFFORD ,  SCHAIBLE PAUL MARTIN ,  RISEMAN JACOB ,  SCHWARTZ GERALDINE COGIN

IPC: C23F4/00 ,  H01L21/3065 ,  H01L21/32 ,  H01L21/3213 ,  H05K3/08 ,  C23C15/00