公开(公告)号：JPH05251385A

公开(公告)日：1993-09-28

申请号：JP33132892

申请日：1992-12-11

Applicant: IBM

Inventor： POORU SEKUUON KIMU ,  SEIKI OGURA

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/90

Abstract: PURPOSE: To provide a method for mutual connection between the local parts of adjacent devices on a semiconductor substrate by changing an insulating layer to a conductive layer. CONSTITUTION: An electrically insulating etch stop layer 26 is stuck to the surface of a semiconductor substrate including a device contact aperture. A conductive layer is stuck to the surface of the etch stop layer 26. A local mutual connection pattern is formed on the conductive layer by using the patterning (30, 30") of the resist and a subtractive etching to be stopped at the layer 26. The conductive pattern and its lower side insulating material 26 interact with each other by heat activation and a single conductive layer (32, 32") is formed.