公开(公告)号：JPH11317380A

公开(公告)日：1999-11-16

申请号：JP4384099

申请日：1999-02-22

Applicant: IBM

Inventor： MURPHY WILLIAM J ,  PRABHATTO TIWARI

IPC: C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  C23C14/58 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming cobalt on a silicon substrate which contains a specific oxide on its surface. SOLUTION: An improved sputtering apparatus 10 is used. The sputtering apparatus 10 is improved, in such a manner that it is provided with an electric circuit 18 to be connected to a ground. A wafer 17 disposed in the apparatus is electrically connected to a ground circuit 18. The ground circuit 18 preferably includes a resistor 19 inside for controlling the wafer potential and the current from the wafer to the ground. By supplying a current from the wafer to the ground, preferably a ground circuit including a resistor, the cleaning of the specific oxide on the surface of the silicon and deposition of cobalt on the silicon which has been cleaned can be performed at the same time, as it is. Immediately after that, the substrate having deposited cobalt on is surface is annealed, and flat and uniform cobalt silicide is formed over a specified region of the surface of a wafer.