公开(公告)号：DE1521804A1

公开(公告)日：1969-10-16

申请号：DE1521804

申请日：1966-11-16

Applicant: IBM

Inventor： REISMAN ARNOLD ,  RAINER LEONHARDT HORST

IPC: C23F3/04 ,  H01L21/306 ,  H01L7/00

Abstract: 1,143,255. Vapour polishing of IIIB-VB compounds. INTERNATIONAL BUSINESS MACHINES CORP. 2 Nov., 1966 [17 Nov., 1965], No. 49045/66. Heading C1A. The surface of a substrate of a III B -V B compound is polished by exposing it at elevated temperatures to a flowing gas stream containing a hydrogen halide and the Group V B element at a partial pressure sufficient to prevent dissociation of the compound. The substrate is then suitable for epitaxial deposition without removal from the site. The compound may be an arsenide, antimonide, or phosphide of Ga or In. Preferably GaAs is exposed to an atmosphere of H 2 +HI+As at a p.p. of 15-300 Torr, at a temperature from 1000‹ C. to the m.pt. of GaAs, e.g. 1100-1200‹ C. HI may be supplied from a tank, or generated by passing H 2 over heated I 2 and through a heated Pt bed. The mixture of HI and H 2 is then passed over a heated source of solid As. Alternatively, a decomposable compound of the Group V B element may be used, e.g. AsH 3 , SbH 3 , or PH 3 . The substrate may previously have been mechanically or chemically polished. Its surface may be oriented in the (111), (211), (100) or (110) plane.