公开(公告)号：GB2517696A

公开(公告)日：2015-03-04

申请号：GB201315193

申请日：2013-08-27

Applicant: IBM

Inventor： RAINO GABRIELE ,  KREBS DANIEL

IPC: G11C13/00 ,  G11C11/56 ,  H01L45/00

Abstract: A plurality of nano devices 2 arranged with nanoscale spacing and a thermal deflector 10 located between at least one pair of the nano devices 2. The deflector 10 or thermal heat sink is adapted to deflect thermal near-field radiation emanating from one nano device of the pair away from the other nano device of the pair. The deflector may comprise at least one nanoelement 11 arranged 10 to deflect the thermal near-field radiation. The nanoelement may comprise a discrete region of material, for example a quantum dot 11 having a plasmon-polariton frequency tuned in dependence on the thermal near-field radiation to be deflected. The discrete region may comprise a two dimensional electron gas, whilst the material may comprise a doped semiconductor for example including silicon. The deflector may comprise at least one chain of nano elements arranged to transport thermal energy due to the thermal near-field radiation along the chain. The nano element resonant frequency may vary along the chain. The nano device may comprise a phase change memory cell arranged in an array and in particular adapted to deflect thermal near field radiation during a RESET operation. The nano device may comprise TiN electrodes 4,5 and SiN insulating walls surrounding the phase change material (PCM) 3 which may be a chalcogenide.