公开(公告)号：GB2605097A

公开(公告)日：2022-09-21

申请号：GB202208634

申请日：2020-11-20

Applicant: IBM

Inventor： RAJIV JOSHI ,  SUDIPTO CHAKRABORTY

IPC: G06N3/063

Abstract: A structure of a memory device is described. The structure can include an array of memory cells. A memory cell can include at least one metal-oxide-semiconductor (MOS) element, where a source terminal of the at least one MOS element is connected to a drain terminal of the MOS element. The source terminal being connected to the drain terminal can cause the at least one MOS element to exhibit capacitive behavior for storing electrical energy. A first transistor can be connected to the at least one MOS element, where an activation of the first transistor can facilitate a write operation to the memory cell. A second transistor can be connected to the at least one MOS element, where an activation of the second transistor can facilitate a read operation from the memory cell.