公开(公告)号：GB2605096A

公开(公告)日：2022-09-21

申请号：GB202208597

申请日：2020-11-18

Applicant: IBM

Inventor： STEVEN HOLMES ,  BRUCE DORIS ,  MATTHIAS GEORG GOTTWALD ,  RAJIV V JOSHI ,  SUDIPTO CHAKRABORTY

IPC: H01L39/22 ,  G11C11/44

Abstract: A within-chip magnetic field control device is formed in proximity to a Josephson Junction (JJ) structure. The within-chip magnetic field control device includes wiring structures that are located laterally adjacent to the JJ structure. In some embodiments, the magnetic field control device also includes, in addition to the wiring structures, a conductive plate that is connected to the wiring structures and is located beneath the JJ structure. Use of electrical current through the wiring structures induces, either directly or indirectly, a magnetic field into the JJ structure. The strength of the field can be modulated by the amount of current passing through the wiring structures. The magnetic field can be turned off as needed by ceasing to allow current to flow through the wiring structures.

公开(公告)号：GB2606238A

公开(公告)日：2022-11-02

申请号：GB202115782

申请日：2021-11-03

Applicant: IBM

Inventor： SUDIPTO CHAKRABORTY ,  RAYMOND RICHETTA ,  PAT ROSNO

IPC: H03H11/04 ,  G06N10/40

Abstract: A filter stage system includes a continuous time baseband filter 500 that generates a filtered current iout, and a mirroring component (Fig.1, 106) that mirrors the filtered current to an output (Fig.1, 108). The continuous time baseband filter comprises a feedback loop that employs at least one first impedance node, at C1, providing a dominant pole and at least one second impedance node, at C2, providing a non-dominant pole; the first impedance node has a higher impedance that the second impedance node. A method for quantum computing and a computer program product, each using the filter stage system, are also provided. The mirroring component may selectively change a mirroring ratio to achieve a variable gain. The continuous time baseband filter may be single-ended or differential (Fig.10). The system may include a plurality of continuous time baseband filters, a subset of which may provide low-pass, band-pass or high-pass characteristics. The filter may be used in a radio frequency (RF) digital-to-analog converter (DAC) (Fig.1, 100) and in applications where the low distortion provided by current mode processing is advantageous, such as arbitrary waveform generation.

公开(公告)号：GB2605097A

公开(公告)日：2022-09-21

申请号：GB202208634

申请日：2020-11-20

Applicant: IBM

Inventor： RAJIV JOSHI ,  SUDIPTO CHAKRABORTY

IPC: G06N3/063

Abstract: A structure of a memory device is described. The structure can include an array of memory cells. A memory cell can include at least one metal-oxide-semiconductor (MOS) element, where a source terminal of the at least one MOS element is connected to a drain terminal of the MOS element. The source terminal being connected to the drain terminal can cause the at least one MOS element to exhibit capacitive behavior for storing electrical energy. A first transistor can be connected to the at least one MOS element, where an activation of the first transistor can facilitate a write operation to the memory cell. A second transistor can be connected to the at least one MOS element, where an activation of the second transistor can facilitate a read operation from the memory cell.