公开(公告)号：JPH0684789A

公开(公告)日：1994-03-25

申请号：JP6593

申请日：1993-01-04

Applicant: IBM

Inventor： ROBAATO RICHIYAADO DETSUCHIEIR ,  KURISUTOFUAA FURANSHISU RION ,  RATONASABAPASHII SORIYAKUMARAN ,  GERII TOOMASU SUPINIRO ,  KEBIN MAIKERU UERUSHIYU ,  ROBAATO RABIN UTSUDO

IPC: G03F7/11 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To eliminate the damage caused by the reflection of illuminating light in photolithography. CONSTITUTION: An anti-reflective coating composition(ARC) having high absorption of mid UV and deep UV radiation substantially inert to the contact reaction with a photoresist composition chemically amplified comprising a polymer composition inert to said photoresist composition to be used together with the same. Accordingly, the dispersion in the line width can be notably improved when this composition is used.