公开(公告)号：JPH0680613A

公开(公告)日：1994-03-22

申请号：JP819693

申请日：1993-01-21

Applicant: IBM

Inventor： GUREGORII BUREITA ,  DANIERU JIYOZEFU DOOSON ,  MAAMUUDO MOSUTAFUA KOOJIYASUTE ,  RANII WAIIRIN KUUON ,  ERUUTSUDO HAABAATO MEISHII ,  DEIBITSUDO POORU MERITSUTO ,  UEIN MAATEIN MOROO ,  SUTANREE YUUJIIN PEROO ,  HAABANZU SHINGU SAKUDEBU ,  ROBAATO RABIN UTSUDO ,  HIROSHI ITOU

IPC: B01J31/02 ,  C07B61/00 ,  C07C68/06 ,  C07C69/96 ,  C08F8/00 ,  C08F12/24 ,  C08G8/28

公开(公告)号：JPS60159847A

公开(公告)日：1985-08-21

申请号：JP17167184

申请日：1984-08-20

Applicant: IBM

Inventor： SUTANREE YUUJIN PERIYUURUTO ,  ROBAATO RABIN UTSUDO

IPC: G03C1/72 ,  C08G8/00 ,  C08G8/32 ,  G03C1/52 ,  G03F7/022 ,  G03F7/023 ,  H01L21/027

公开(公告)号：JPH03152543A

公开(公告)日：1991-06-28

申请号：JP25042190

申请日：1990-09-21

Applicant: IBM

Inventor： UIRAADO AARU KONREE JIYUNIA ,  JIEFURII DONARUDO JIEROOMU ,  UEIN MAATEIN MOROO ,  SUTANREE YUUJIIN PEROORUTO ,  GEERII TOMASU SUPINITSURO ,  ROBAATO RABIN UTSUDO

IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PURPOSE: To ensure satisfactory contrast and sensitivity by using an arom. hydroxy substd. polymer, a radiation-degradable acid generating agent and a crosslinking agent having two epoxy groups per one molecule. CONSTITUTION: This photoresist contains polyhydroxystyrene, especially poly-p- hydroxystyrene or novolak such as m-cresol novolak or bisphenol A novolak as an arom. hydroxy substd. polymer, a metallic or nonmetallic onium salt or a nonmetallic precursor of sulfonic acid generating the strong acid when exposed with radiation as a radiation-degradable acid generating agent and an epoxide-contg. compd. having two epoxy groups and crosslinking the hydroxy substd. polymer in the presence of the acid generated under radiation. Satisfactory contrast is ensured without reducing sensitivity.

公开(公告)号：JPH0684789A

公开(公告)日：1994-03-25

申请号：JP6593

申请日：1993-01-04

Applicant: IBM

Inventor： ROBAATO RICHIYAADO DETSUCHIEIR ,  KURISUTOFUAA FURANSHISU RION ,  RATONASABAPASHII SORIYAKUMARAN ,  GERII TOOMASU SUPINIRO ,  KEBIN MAIKERU UERUSHIYU ,  ROBAATO RABIN UTSUDO

IPC: G03F7/11 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To eliminate the damage caused by the reflection of illuminating light in photolithography. CONSTITUTION: An anti-reflective coating composition(ARC) having high absorption of mid UV and deep UV radiation substantially inert to the contact reaction with a photoresist composition chemically amplified comprising a polymer composition inert to said photoresist composition to be used together with the same. Accordingly, the dispersion in the line width can be notably improved when this composition is used.

公开(公告)号：JPH02209977A

公开(公告)日：1990-08-21

申请号：JP27193689

申请日：1989-10-20

Applicant: IBM

Inventor： DEIBITSUDO POORU MERITSUTO ,  UEIN MAATEIN MOOROU ,  ROBAATO RABIN UTSUDO

IPC: C09D11/10 ,  C08F8/14 ,  G03F7/039 ,  H01L21/027

公开(公告)号：JPS5769743A

公开(公告)日：1982-04-28

申请号：JP11945581

申请日：1981-07-31

Applicant: Ibm

Inventor： UIRIAMU ANSONII MOIA ,  ROBAATO RABIN UTSUDO

IPC: G03C1/72 ,  G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  H01L21/027 ,  H01L21/30

CPC classification number: G03F7/325