公开(公告)号：JP2001028334A

公开(公告)日：2001-01-30

申请号：JP2000172901

申请日：2000-06-09

Applicant: IBM

Inventor： RAUURU EDMUND ACOSTA ,  ANGELOPOULOS MARIE ,  STEPHEN ALLEN CORDES

IPC: G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide a film and hard spacer type pellicle structure, where the area of X-ray mask is increased, the film and fitting material of an X-ray mask is enlarged in range, and precision in manufacture is improved. SOLUTION: An oxide layer is patterned on bulk spacer materials 12 and 13, having a thickness equal to the gap between an X-ray mask 1 and the oxide which is to be patterned. The oxide on the bulk spacer materials 12 and 13 prevents conversion of a part of wafer that functions as a spacer to the etching characteristics which differ from the bulk spacer materials 12 and 13 via the exposed surface of the wafer of bulk spacer materials 12 and 13. The wafer of exposed bulk spacer materials 12 and 13 functions as a spacer and is converted into a depth which protects the edge part. Then the oxide is removed. A film is made to adhere to the entire surface of the bulk spacer materials 12 and 13. The bulk wafer is removed as far as the converted part by utilizing the different etching characteristics which is provided.