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公开(公告)号：CA1124409A
公开(公告)日：1982-05-25
申请号：CA343327
申请日：1980-01-09
Applicant: IBM
Inventor： RAY ASIT K , REISMAN ARNOLD
IPC: H01L21/31 , C23C8/36 , H01L21/316 , B05D3/06
Abstract: SEMICONDUCTOR PLASMA OXIDATION Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure. YO979-007
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