公开(公告)号：JPH0330207A

公开(公告)日：1991-02-08

申请号：JP12016190

申请日：1990-05-11

Applicant: IBM

Inventor： EDOWAADO DAAKO BAABIKU ,  MAIKURU HATSUAKISU ,  RICHIYAADO PIITAA MAGUUEI ,  SHIYARON RUIIZU NIYUUNESU ,  YUURII ROSUTEISURAFU PARASHICH ,  JIEIN MAAGARETSUTO SHIYOO

IPC: B32B7/02 ,  C08L83/14 ,  H01B3/18 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498

Abstract: PURPOSE: To provide a dielectric having a reactive ion etching(RIE) etch barrier by having electric conductors and a layer of a specific polymer. CONSTITUTION: This structure comprises a dielectric and a polymeric body embedded in the dielectric. The polymeric body contains an aromatic constituent including at least one of Si and Ge atoms and contains a crosslinking agent selected from a group consisting of one or several kinds of metal cyclobutane groups and metal vinyl groups, the cyclobutane groups and vinyl groups containing at least one of Si and Ge atoms. Thereby a polymeric material filling the gaps between electric conductors and the dielectric in which the conductors are embedded can be obtained and at the same time works as an RIE etch barrier while having high temperature stability, enabling crosslinking of a polymer.