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    PHOTOSENSITIVE POLYIMIDE PRECURSOR COMPOSITION
    5.
    发明专利
    PHOTOSENSITIVE POLYIMIDE PRECURSOR COMPOSITION 失效

    公开(公告)号：JPH0643640A

    公开(公告)日：1994-02-18

    申请号：JP25254792

    申请日：1992-09-22

    Applicant: IBM

    Inventor： JIEFURII DONARUDO JIEROOMU ,  MAATEIN JIYOZEFU GOORUDOBAAGU ,  NANSHII KARORIN RABIANKA ,  JIEIN MAAGARETSUTO SHIYOO

    IPC: C08G73/10 ,  C08L79/08 ,  G03F7/004 ,  G03F7/027 ,  G03F7/037 ,  G03F7/038

    Abstract: PURPOSE: To obtain a compsn. increasing resolution and sensitivity while reducing the lass of thickness at the time of development by using a polyimide precursor and a complex cation of a polymerizable functional carboxylic acid compd. having a tert. amino functional group as a reactivity modifier. CONSTITUTION: An unmodified polyimide precursor such as a precursor of polyester imide, polyamide-imide-ester, polyamide-imide or polysiloxane-imide as well as other mixed polyimides is included in a polyimide precursor (polyamic acid) used. A required reactivity modifier is a complex cation of a polymerizable functional carboxylic acid compd. having a tert. amino functional group. This tert. amino functional substance preferably contains a polymerizable part such as an ethylenic unsatd. part and/or plural tert. amino positions.

    NEGATIVE TYPE PHOTORESIST AND USE THEREOF
    9.
    发明专利
    NEGATIVE TYPE PHOTORESIST AND USE THEREOF 失效

    公开(公告)号：JPH02294651A

    公开(公告)日：1990-12-05

    申请号：JP6450790

    申请日：1990-03-16

    Applicant: IBM

    Inventor： MAIKURU HATSUAKISU ,  JIEIN MAAGARETSUTO SHIYOO ,  KEBIN JIEI SUCHIYUAATO

    IPC: G03F7/038 ,  C08G59/00 ,  C08G59/14 ,  C08G59/18 ,  G03F7/004 ,  G03F7/029 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

    Abstract: PURPOSE: To impart durability against plasma containing oxygen by preparing a resist from a polymer material obtd. by the interaction between an organosilicon compd. and an epoxy novolac polymer, and a radiation-sensitive onium salt. CONSTITUTION: The resin contains a polymer material obtd. by the interaction between an organosilicon compd. and an epoxy novolac polymer, and a radiation-sensitive onium salt. This onium salt is incorporated by an amt. required to increase the photosensitivity of the compsn. for electron beams, X-rays, ion beams and far UV rays. The polymer material is obtd. by the interaction between an organosilicon compd. and an epoxy novolac. Thereby, the obtd. resist is durable against reactive ion etching in oxygen plasma and an image of high resolution can be obtd.

    GENERATION OF RELIEF PATTERN AND USE
    10.
    发明专利
    GENERATION OF RELIEF PATTERN AND USE 失效

    公开(公告)号：JPH02158737A

    公开(公告)日：1990-06-19

    申请号：JP25513289

    申请日：1989-09-29

    Applicant: IBM

    Inventor： DONISU JIYOOJI FURAJIERO ,  MAIKURU HATSUAKISU ,  SUUZAN KANINGAMU NOE ,  JIEIN MAAGARETSUTO SHIYOO ,  DEIBITSUTO FURANKU UITSUTOMAN

    IPC: G03F7/075 ,  G03F7/26 ,  H01L21/027

    Abstract: PURPOSE: To improve durability against plasma including oxygen by exposing a part of a polymer material layer to active rays and bringing a specified polyfunctional org. metal material into contact with the layer to make the thickness of the layer in the exposed part different from the thickness of the layer in an unexposed part. CONSTITUTION: A photosensitive polymer material layer containing functional groups with reactive hydrogen and/or precursors of reactive hydrogen functional groups is partly exposed to active rays to change amt. of hydrogen functional groups in the exposed part. The layer is then brought into contact with a polyfunctional org. metal material. The polyfunctional org. metal material has at least two functional groups which reacts with the reactive hydrogen groups of the polymer material and make the thickness of the layer in the exposed part different from the thickness in an unexposed part. Thereby, the obtd. pattern is stable at high temp. and has good durability against an org. solvent.

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