公开(公告)号：US3780359A

公开(公告)日：1973-12-18

申请号：US3780359D

申请日：1971-12-20

Applicant: IBM

Inventor： DUMKE W ,  RIDEOUT V ,  WOODALL J

IPC: H01L21/66 ,  H01L21/306 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737 ,  H01L3/20 ,  H01L9/12

CPC classification number: H01L29/7371 ,  H01L21/30612 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/107

Abstract: An improved heterojunction transistor and a method of fabricating the same is provided. The device is comprised of liquid phase epitaxially grown binary compound layers of group IIIA-VB semiconductor materials which serve as collector and base regions and of a ternary compound layer of group IIIA-VB semiconductor material which serves as the heterojunction emitter.

Abstract translation: 提供了一种改进的异质结晶体管及其制造方法。 该装置由用作集电极和基极区域的IIIA-VB族半导体材料的液相外延生长二元化合物层和用作异质结发射体的IIIA-VB族半导体材料的三元化合物层组成。