公开(公告)号：JPH05235488A

公开(公告)日：1993-09-10

申请号：JP21668292

申请日：1992-08-14

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  RIN II RIU ,  EMIRIO YUUJINIO MENDEZU

IPC: H01S5/00 ,  H01S3/0941 ,  H01S5/026 ,  H01S5/04 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/34 ,  H01S3/18 ,  H01S3/096 ,  H01S3/103

Abstract: PURPOSE: To modulate frequency and amplitude of laser light output by utilizing combined quantum well in an active region of a semiconductor laser. CONSTITUTION: An active region 120 of a variable wavelength laser comprises two quantum wells with a width of 50 Å or lower, which are separated by a barrier layer with a width of 20 Å or lower. The quantum well is made of intrinsic GaAs, and the barrier layer is made of Alx Ga1-x As (x=0.23). Since the active region is surrounded with a double hetero-structure, where a first side thereof is of doped p-type and a second side thereof is of doped n-type, a laser 30 is of a pin-type structure. A reverse bias against flat-band voltage with pin structure is applied to the pin structure, to modulate the frequency and intensity of the laser output. A variable wavelength laser is pumped by conventional means containing electric and optical pumping. The modulation of wavelength is almost linear in the operational range of 1.5 V.