公开(公告)号：JPH10270712A

公开(公告)日：1998-10-09

申请号：JP7620198

申请日：1998-03-24

Applicant: IBM

Inventor： CHRISTOS DIMITRIOS DIMITRACOPO ,  PETER RICHARD DANKOOMU ,  BRUCE K FARMAN ,  ROBERT B LEIBOWITZ ,  DEBORAH AN NOUMAYER ,  PURUSHOTHAMAN SAMPATH

IPC: H01L29/786 ,  H01L21/336 ,  H01L51/00 ,  H01L51/05

Abstract: PROBLEM TO BE SOLVED: To allow a combination of an organic semiconductor and an inorganic gate insulation layer with a high dielectric constant by combining a thin film gate insulator with a high dielectric constant, an organic semiconductor, a metal, a conductive polymer, and a heavily doped and highly conductive material. SOLUTION: A thin film gate insulator with a high dielectric constant such as a barium strontium titanate, an organic semiconductor such as pentasene, a metal, a conductive polymer, a heavily doped and highly conductive material as gate, source, and drain electrodes, and their combination are used to form a thin film transistor. In the structure thereof, an inorganic gate insulator with a high permittivity is used together with an organic insulator such as pentasene. The insulator with a high dielectric ε is annealed at 400 deg.C and the dielectric constant of ε>=15 can be realized. Therefore, a substrate made of glass or plastic can be used. The gate electrode can be formed of heavily doped silicon substrate as a gate.