公开(公告)号：US3620837A

公开(公告)日：1971-11-16

申请号：US3620837D

申请日：1968-09-16

Applicant: IBM

Inventor： LEFF JERRY ,  ROBERTS ARTHUR A

IPC: H01L21/00 ,  H01L21/285 ,  H01L23/485 ,  B44D1/18

CPC classification number: H01L21/00 ,  H01L21/2855 ,  H01L23/485 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/14 ,  Y10T428/24339 ,  H01L2924/00

Abstract: Improved reliability of aluminum and aluminum alloy lands on semiconductor integrated circuits is obtained by vapor depositing aluminum or an aluminum alloy onto a semiconductor substrate which is at a temperature between 320* and 570* C. The total thickness of the deposited aluminum or aluminum alloy is between 5,000 and 25,000 A.

公开(公告)号：CA905239A

公开(公告)日：1972-07-18

申请号：CA905239D

Applicant: IBM

Inventor： ROBERTS ARTHUR A ,  LEFF JERRY

IPC: H01L21/00 ,  H01L21/285 ,  H01L23/485