中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.018 seconds)

    ALIGNMENT LAYER ORIENTATION IN RASTER SCAN THERMALLY ADDRESSED SMECTIC LIQUID CRYSTAL DISPLAYS
    2.
    发明专利
    ALIGNMENT LAYER ORIENTATION IN RASTER SCAN THERMALLY ADDRESSED SMECTIC LIQUID CRYSTAL DISPLAYS 未知

    公开(公告)号：CA1247726A

    公开(公告)日：1988-12-28

    申请号：CA464051

    申请日：1984-09-26

    Applicant: IBM

    Inventor： CLECAK NICHOLAS J ,  COX ROBERT J ,  FENG JOSEPH S ,  LEFF JERRY

    IPC: G02F1/13 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/1337 ,  G09F9/35

    Abstract: ALIGNMENT LAYER ORIENTATION IN RASTER SCAN THERMALLY ADDRESSED SMECTIC LIQUID CRYSTAL DISPLAYS The orientation of the alignment layer in a rasterscanned thermally addressed smectic liquid crystal display device can be chosen relative to the writing orientation to accentuate a selected characteristic. A perpendicular alignment with respect to the scan direction produces uniformly written images in both scan directions to allow high quality bidirectional writing. In a preferred embodiment the liquid crystal cell includes a liquid crystal material comprising 4octyloxy-4'-cyanobiphenyl 37.5%, 4-decyl-4'-cyanobiphenyl 36.8% weight percent and 4-undecyl-4'-cyanobiphenyl 25.7 weight percent.

    6.
    发明专利
    未知

    公开(公告)号：DE3480956D1

    公开(公告)日：1990-02-08

    申请号：DE3480956

    申请日：1984-10-26

    Applicant: IBM

    Inventor： CLECAK NICHOLAS JEFFRIES ,  COX ROBERT JAMES ,  FENG JOSEPH SHAO-YING ,  LEFF JERRY

    IPC: G02F1/13 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/1337

    Abstract: The orientation of the alignment layer in a raster-scanned thermally addressed smectic liquid crystal display device can be chosen relative to the writing orientation to accentuate a selected characteristic. A perpendicular alignment with respect to the scan direction produces uniformly written images in both scan directions to allow high quality bidirectional writing. A perpendicular alignment with respect to the scan direction produces uniformly written images in both scan directions to allow high quality bidirectional writing. Parallel alignment maximizes the contrast in unidirectional writing. Antiparallel alignment increases the selective erase window and improves the resolution in unidirectionally written pages. In a preferred embodiment the liquid crystal cell includes a liquid crystal material comprising 4-octyloxy-4'-cyanobiphenyl 37.5%, 4-decyl-4'-cyanobiphenyl 36.8% weight percent and 4-undecyl-4'-cyanobiphenyl 25.7 weight percent.The drawing shows an LC cell comprising glass substrates 10, 12 having an outer anti reflection coating 8, 21. The substrate 10 carries a second anti reflection coating 10A, a conductive, metal, light absorbing layer 18, the reflective aluminium layer 20, an insulating silicon dioxide layer 19 and the alignment layer 22. The substrate 12 carries the second alignment layer 27 and a transparent conductor layer 24. The laser beam 7 sweeps in a direction perpendicular to the plane of the paper and increments vertically. The alignment layers 22, 27 are put down so that the liquid crystal directors are orientated parallel to the plane of the layers 22, 27 and perpendicular to the sweep direction of the laser beam.

    7.
    发明专利
    未知

    公开(公告)号：FR2394892A1

    公开(公告)日：1979-01-12

    申请号：FR7715177

    申请日：1977-05-11

    Applicant: IBM

    Inventor： DUKE PETER J ,  LEFF JERRY ,  LICLICAN LEO C ,  POWELL MARK V

    IPC: G11C11/14 ,  G03F7/00 ,  H01F10/18 ,  H01F10/193 ,  H01F41/14 ,  H01F41/34 ,  H01L21/027 ,  H01L21/28 ,  H05K3/10 ,  H05K3/24 ,  H01L21/47 ,  H01L21/70

    Abstract: This single level masking process includes the use of two layers of a positive photoresist. A pattern is formed in the first layer of photoresist. This photoresist pattern is heated and polymerized to a degree which permits it to be resistant to attack when covered with a second layer of the same positive photoresist, that is, the first photoresist pattern will maintain its integrity. After the heat treatment, the first layer pattern is substantially insensitive to actinic radiation and is easily stripped with conventional solvents. A pattern is formed in a second layer of photoresist that is different from the pattern formed in the first layer. After a first metal is deposited on portions of the substrates exposed in the second layer pattern, the second layer pattern is removed. A second metal is deposited on the portions of the substrate exposed in the first layer pattern and then that pattern is removed.

    8.
    发明专利
    未知

    公开(公告)号：DE2722557A1

    公开(公告)日：1977-12-22

    申请号：DE2722557

    申请日：1977-05-18

    Applicant: IBM

    Inventor： DUKE PETER JAMES ,  LEFF JERRY ,  LICLICAN LEO CALICA ,  POWELL MARK VERNON

    IPC: G11C11/14 ,  G03F7/00 ,  H01F10/18 ,  H01F10/193 ,  H01F41/14 ,  H01F41/34 ,  H01L21/027 ,  H01L21/28 ,  H05K3/10 ,  H05K3/24 ,  H01L21/88

    Abstract: This single level masking process includes the use of two layers of a positive photoresist. A pattern is formed in the first layer of photoresist. This photoresist pattern is heated and polymerized to a degree which permits it to be resistant to attack when covered with a second layer of the same positive photoresist, that is, the first photoresist pattern will maintain its integrity. After the heat treatment, the first layer pattern is substantially insensitive to actinic radiation and is easily stripped with conventional solvents. A pattern is formed in a second layer of photoresist that is different from the pattern formed in the first layer. After a first metal is deposited on portions of the substrates exposed in the second layer pattern, the second layer pattern is removed. A second metal is deposited on the portions of the substrate exposed in the first layer pattern and then that pattern is removed.

Patent Agency Ranking