公开(公告)号：DE69102263T2

公开(公告)日：1994-12-08

申请号：DE69102263

申请日：1991-03-11

Applicant: IBM

Inventor： ROENTGEN PETER DR ,  HEUBERGER WILHELM ,  UNGER PETER DR ,  BONA GIAN-LUCA

IPC: H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01S5/00 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19 ,  H01L29/73

Abstract: Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces : the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.

公开(公告)号：DE69102263D1

公开(公告)日：1994-07-07

申请号：DE69102263

申请日：1991-03-11

Applicant: IBM

Inventor： ROENTGEN PETER DR ,  HEUBERGER WILHELM ,  UNGER PETER DR ,  BONA GIAN-LUCA

IPC: H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01S5/00 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19 ,  H01L29/73

Abstract: Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces : the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.